Wacker-chemitronic Gesellschaft Fur Elektronik-grundstoffe Mbh

Helmut Hamster

Franz Koppl

Rudolf Griesshammer

Helmut Lorenz

Alois Goppinger

Josef Thalmeier

Erwin Bugl

A device is provided for treating gases or mixtures of gases at high temptures, such as, for example, for the reaction, known as tetraconversion, of silicon tetrachloride with hydrogen to form trichlorosilane. The device has a heat-insulated housing having gas-inlet and gas-outlet openings and a plurality of resistance heaters disposed in the housing that are directly electrically heated and around or through which the gases to be treated flow. According to a preferred embodiment, the device is also provided with an integrated heat-exchanger unit.

Device for treating gases at high temperatures

The invention relates to a method and device for making pure semiconductor aterial by thermal decomposition of compounds of the semiconductor material on suitable carrier elements. The quantity and quality of the obtained semiconductor material is increased in accordance with the invention by introducing the compounds to be decomposed into the reactor chamber in at least a partially liquid state through a nozzle having a plurality of discharge openings.

Method for the deposition of pure semiconductor material

In a device and process for the deposition of pure semiconductor materials, specially silicon, by thermal decomposition of gaseous compounds of said semiconductor materials on carrier bodies heated to decomposition temperatures, wherein the device consists of a metallic base plate, mounting means and electrical connections thereon for heating the carrier bodies, as well as pipe connections for supply and exhaust of said gaseous compounds, and a bell-shaped cover slipped onto the base plate and forming a gas-tight seal therewith, the improvement that the area of the bell-shaped cover facing the reaction space consists of silver or silverplated steel. A removable heating element is used to preheat the carrier bodies and a cylinder disposed about the bell forms therewith a closed annular cooling chamber.

Process for the deposition of pure semiconductor material

In a device and process for the deposition of pure semiconductor materials, specially silicon, by thermal decomposition of gaseous compounds of said semiconductor materials on carrier bodies heated to decomposition temperature, wherein the device consists of a silver plated base plate, mounting means and electrical connections thereon for heating the carrier bodies, as well as pipe connections for supply and exhaust of said gaseous compounds, and a bell-shaped cover slipped onto the base plate and forming a gas-tight seal therewith, the improvement that the area of the bell-shaped cover facing the reaction space consists of silver or silverplated steel.

Silverplated vapor deposition chamber

A process for deposition of polycrystalline silicon from the gas phase on ated carrier bodies of carbon, which comprises assembling the carrier bodies from extremely thin flexible graphite foils, heating the bodies to deposition temperature, while contacting them with a gaseous mixture containing a decomposable silicon compound and, if desired, hydrogen, and separating the deposited silicon from the carrier body, after termination of the deposition process, by mechanical means. The polycrystalline silicon can either be deposited in the form of shaped hollow bodies for use as laboratory equipment or in the semiconductor industries, or it may be processed to monocrystalline materials.

Process for the deposition of polycrystalline silicon from the gas phase

A process for the continuous production of silicon rods or tubes by the dsition of silicon from the gaseous phase on the inner wall of a carrier tube heated to the deposition temperature, in which a cooled, hollow metal cylinder is placed in a reactor having one open end, and a flexible band, substantially resistant to silicon at the deposition temperature, is continuously wound onto the cylinder in an overlapping manner at an angle of pitch from 5.degree. to 40.degree. so as to form the carrier tube for the silicon to be deposited; the tube is continuously drawn off the metal cylinder by a rotary traction movement and the portion of the tube adjacent the metal cylinder and still in the reactor is heated to the deposition temperature of about 1050.degree. to 1250.degree. C, while at the same time the gaseous mixture is passed for decomposition through the tube under a pressure exceeding the external atmospheric pressure by 0.01 - 1 bar, thus causing the inside of the tube gradually to be filled partly or entirely with the silicon as the decomposition of the gas mixture proceeds, and finally the Si-filled tube is continuously withdrawn from the reactor at the open end thereof, with the recovery of the silicon rod or tube by removal of the carrier tube through etching, burning off, or sandblasting.

Process for the continuous production of silicon rods or tubes by

A process for making hollow silicon bodies by decomposition from a gaseous ompound containing silicon and depositing said silicon on heated carrier bodies, which comprises assembling in a decomposition device a number of board-shaped members of silicon to form a hollow carrier body, heating said body to the decomposition temperature of the gaseous compound, introducing the gas into the device whereby it is thermally decomposed, causing the silicon released thereby to become inseparately united with the hollow carrier body, the hollow silicon body so formed being immediately available for use in the semiconductor industries. The invention also comprises the silicon bodies so made.

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Burghausen, Germany

Helmut Hamster