Siemens Aktiengesellschaft

Osram Opto Semiconductors Gmbh

Osram Opto Semiconductor Gmbh

Helmut Fischer

Reinhard Sedlmeier

Wolf Jakowetz

Gisela Lang

Alfred Lell

Siegfried Herrmann

Herbert Brunner

Tony Albrecht

Ernst Nirschl

Walter Wegleiter

Ewald Karl Michael Guenther

Andreas Weimar

Andreas Plössl

Bret A Johnson

Martin Buck

Dieter Eissler

Andreas Leber

Alexander Heindl

Christine Höss

Sebastian Kuhne

Heinrich Hemmert

Irene Weininger

An optoelectronic semiconductor device includes an optoelectronic semiconductor layer sequence on a metal carrier element, which includes as a first component silver and as a second component a material having a lower coefficient of thermal expansion than silver, wherein the first and second components are intermixed in the metal carrier element.

Optoelectronic semiconductor device and method for producing an optoelectronic semiconductor device

The invention relates to an optoelectronic semiconductor component, comprising a substrate-free optoelectronic semiconductor chip (), which has a first main surface () on an upper face and a second main surface () on a lower face, and a metal carrier (), which is arranged on the lower face of the optoelectronic semiconductor chip (), wherein the metal carrier () protrudes over the optoelectronic semiconductor chip () in at least one lateral direction () and the metal carrier () is deposited on the second main surface () of the optoelectronic semiconductor chip () using a galvanic or electroless plating method.

Electrolytically coated optoelectronic semiconductor component and method for producing an optoelectronic semiconductor component

A method is disclosed in which a base body is prepared that comprises a layer sequence intended for the LED chip and suitable for emitting electromagnetic radiation. A cap layer is applied to at least one main surface of the base body. A cavity is introduced into the cap layer and is completely or partially filled with a luminescence conversion material. The luminescence conversion material comprises at least one phosphor. A method is also disclosed in which the cap layer comprises photostructurable material and at least one phosphor, such that it is able to function as a luminescence conversion material and can be photostructured directly. LED chips that are producible by means of the method are also described.

Chip and method for producing a chip

A method for fabricating at least one mesa or ridge structure in a layer or layer sequence, in which a sacrificial layer () is applied and patterned above the layer or layer sequence. A mask layer is applied and patterned above the sacrificial layer for definition of the mesa or ridge dimensions. The sacrificial layer () and of the layer or layer sequence are removed so that the mesa or ridge structure is formed in the layer or layer sequence. A part of the sacrificial layer () is selectively removed from the side areas thereof which have been uncovered in the previous step, so that a sacrificial layer remains which is narrower in comparison with a layer that has remained above the sacrificial layer as seen from the layer or layer sequence. A coating is applied at least to the sidewalls of the structure produced in the previous steps so that the side areas of the residual sacrificial layer are not completely overformed by the coating material. The sacrificial layer () is removed so that the layer that has remained above the sacrificial layer as seen from the layer or layer sequence is lifted off. A method is also disclosed for fabricating at least one gain-controlled laser diode in a layer sequence, in which method steps analogous to those described above are employed.

Method for fabricating at least one mesa or ridge structure or at least one electrically pumped region in a layer or layer sequence

A light-emitting and/or light-receiving semiconductor body is produced with one or more semiconductor layers composed of GaAs P , where 0&lE;x<1. At least a portion of the surface of the semiconductor layer is first treated with an etching solution H SO :H O :H O in a first etching step and then with hydrofluoric acid in a second etching step. The etching results in a surface roughness on the treated portion of the surface of the semiconductor layer.

Process for producing a light-emitting and/or a light-receiving semiconductor body

A process for producing a semiconductor device includes the following sequential steps: producing a semiconductor body having an Al,Ga,As layer with an upper surface, where x&lE;0.40; applying a contact metallization made of a non-noble metallic material to the Al,Ga,As layer; precleaning a semiconductor surface to produce a hydrophilic semiconductor surface; roughening the upper surface of the Al,Ga,As layer by etching with an etching mixture of hydrogen peroxide &gE;30% and hydrofluoric acid &gE;40% (1000:6) for a period of from 1 to 2.5 minutes; and re-etching with a dilute mineral acid. According to another embodiment, 0&lE;x&lE;1 and the upper surface of the Al,Ga,As layer is roughened by etching with nitric acid 65% at temperatures of between 0&deg; C. and 30&deg; C.

Process for producing a semiconductor device with a roughened semiconductor surface

A dynamic semiconductor memory device of the random access type having an initialization circuit which controls the switch-on operation of the semiconductor memory device and of its circuit components. The initialization circuit supplies a supply voltage stable signal once the supply voltage has been stabilized after the switching-on of the semiconductor memory device. The initialization circuit has an advance detector circuit, which detects a predetermined level state of an externally applied clock control signal chronologically before the supply voltage stable signal is generated and, as a reaction to this, supplies a first enable signal for unlatching the control circuit provided for the proper operation of the semiconductor memory device.

Dynamic semiconductor memory device and method for initializing a dynamic semiconductor memory device

A process for producing a semiconductor device includes the following sequential steps: producing a semiconductor body having an Al.sub.x Ga.sub.1-x As layer with an upper surface, where x.ltoreq.0.40; applying a contact metallization made of a non-noble metallic material to the Al.sub.x Ga.sub.1-x As layer; precleaning a semiconductor surface to produce a hydrophilic semiconductor surface; roughening the upper surface of the Al.sub.x Ga.sub.1-x As layer by etching with an etching mixture of hydrogen peroxide.gtoreq.30% and hydrofluoric acid.gtoreq.40% (1000:6) for a period of from 1 to 2.5 minutes; and re-etching with a dilute mineral acid. According to another embodiment, 0.ltoreq.x.ltoreq.1 and the upper surface of the Al.sub.x Ga.sub.1-x As layer is roughened by etching with nitric acid 65% at temperatures of between 0.degree. C. and 30.degree. C.

Process for producing a semiconductor device with a roughened

A semiconductor component includes a semiconductor body having a front side, a rear side and at least one curved side surface. As viewed from outside the semiconductor body, the at least one curved side surface is convex adjacent the rear side and concave adjacent the front side. The rear side has a greater area than the front side. A method is also provided for producing a plurality of the semiconductor components.

Method for producing a plurality of semiconductor components

Light-emitting diode having a curved side surface for coupling out light

As a function of the occurrence of first square-wave signals the circuit arrangement generates a time window and monitors the appearance of second square-wave signals during the time span defined by the time window. If the second square-wave signals appear during the time window, appropriate output signals are generated. The circuit arrangement contains an integrator which is reset by the first square-wave signals and released subsequently. A comparator compares the voltage at the integrator with two threshold values. If the first threshold valve is exceeded, the time window is opened, and it is reclosed if the second threshold value is exceeded. The threshold values are generated by means of a switchable voltage divider. This voltage divider is switched by means of a flip-flop if the voltage at the integrator exceeds the first or second threshold value, respectively.

Circuit arrangement to monitor the time spacing of signals

The circuit arrangement generates square-wave signals whose recurrence frequency coincides with the recurrence frequency of input signals supplied to it and whose duty cycle is constant, irrespective of the recurrence frequency. The circuit arrangement contains a flip-flop set by each input signal and reset by reset signals. The square-wave signals are emitted at the output of the flip-flop. A first integrator circuit of relatively great time constant is discharged or charged when the flip-flop is set or reset, respectively. Another integrator circuit is charged whenever the flip-flop is set. The instantaneous voltages at outputs of integrator circuits are compared with each other, and when they are the same the comparator generates the reset signal. In addition, the second integrator circuit is discharged, and renewed charging is prevented as long as the flip-flop is reset.

Circuit arrangement to generate squarewave signals with constant duty

A digital phase control circuit incorporates a phase detector and a controllable oscillator controlled by an internal clock. The oscillator is formed as a presettable counter which is counted by the internal clock and preset with a variable intial value corresponding to a function of the frequency of the current data clock derived from an incoming data stream. The phase detector is formed as a shift register for delaying data signals, a counter storage register associated with a counter, and an intermediate storage register associated with the shift register, the storage registers manifesting the state of the counter or the state of the shift register at a predetermined time during an operating cycle, as indicated by the counter. Depending on the position of a data signal in the shift register when the counter reaches a predetermined state, one of the storage registers is selected for connection to a rated value generator for selection of a new rated value for presetting the counter, such new rated value being selected in accordance with the frequency of the current data clock and with the phase-signifying content of one of the storage registers.

Apparatus and method for acquiring data and clock pulses from

For suppressing faults in binary data signals, two circuit branches respectively allocated to one of the polarities of the data signals and each comprising an integrator element and a comparator are provided. The integrator elements, triggered by an edge change of the data signals into the allocated polarity, regardless of a following edge change, acquire the signal components of this polarity up to a prescribed threshold. In response to a corresponding output signal of the following comparator, both integration elements are reset in common. The comparator output signals are also supplied to the set or reset inputs of a bistable switch means which outputs the noise-deinfested data signals.

Growing community of inventors

Lappersdorf, Germany

Helmut Fischer