Fraunhofer-gesellschaft Zur Foerderung Der Angewandten Forschung E.v.

Christian-albrechts-universitat Zu Kiel

Kiel University

Albert-ludwigs-universität Frieburg

Albert-ludwigs-universitat Freiburg

Helmut Föll

Rainer Adelung

Mark-Daniel Gerngross

Emmanuel Ossei-Wusu

Jürgen Carstensen

Marc Christophersen

Andreas Schütt

Wilhelm Warta

Martin Kasemann

Ala Cojocaru

Jörg Bahr

Kay Steen

Georgi Popkirov

A measuring method and device for characterizing a semiconductor component () having a pn junction and a measuring surface, which has a contacting subarea, covered by a metallization. The method including: A. Planar application of electromagnetic excitation radiation onto the measuring area of the semiconductor component () for separating charge carrier pairs in the semiconductor component (), and B. spatially resolved measurement of electromagnetic radiation originating from the semiconductor component () using a detection unit. In one step A, a predetermined excitation subarea of the measuring surface has a predetermined intensity of the excitation radiation and at least one sink subarea of the measuring surface has an intensity of the excitation radiation which is less than the intensity applied to the excitation subarea. The excitation and sink subareas are disposed on opposite sides of said contacting subarea and adjoin it and/or entirely or partially overlap it.

Measuring method and device for characterizing a semiconductor component

The device etches semiconductors with a large surface area in a trough-shaped receptacle containing a liquid electrolyte. A sample head is mounted inside the etching trough, and is provided with a device for holding at least one semiconductor wafer. The device is tilted to promote turbulent electrolyte flow in a space between a bottom surface of the semiconductor wafer and top surface of the trough-shaped receptacle.

Device for etching semiconductors with a large surface area

Growing community of inventors

Mönkeberg, Germany

Helmut Föll