Osram Opto Semiconductors Gmbh

Osram Gmbh

Helmut Bolay

Alfred Lell

Berthold Hahn

Volker Härle

Uwe Strauss

Dominik Eisert

Stefan Bader

Ulrich Zehnder

Andreas Weimer

Hans-Jürgen Lugauer

Andreas Weimar

Johannes Völkl

An optical semiconductor device with a multiple quantum well structure, in which well layers and barrier layers comprising various types of semiconductor layers are alternately layered, in which device well layers () of a first composition based on a nitride semiconductor material with a first electron energy and barrier layers () of a second composition of a nitride semiconductor material with electron energy which is higher in comparison with the first electron energy are provided, followed, seen in the direction of growth, by a radiation-active quantum well layer (), for which the essentially non-radiating well layers () and the barrier layers () arranged in front form a superlattice.

Optical semiconductor device with multiple quantum well structure

An optical semiconductor device with a multiple quantum well structure, is set out in which well layers and barrier layers, comprising various types of semiconductor layers, are alternately layered. The device well layers comprise a first composition based on a nitride semiconductor material with a first electron energy. The barrier layers comprise a second composition of a nitride semiconductor material with electron energy which is higher in comparison to the first electron energy. The well and barrier layers are in the direction of growth, by a radiation-active quatum well layer which with the essentially non-radiating well layers () and the barrier layers (), arranged in front, form a supperlattice.

Optical semiconductor device comprising a multiple quantum well structure

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Pettendorf, Germany

Helmut Bolay