Robert Boschgmbh

Helmut Baumann

Horst Muenzel

Stefan Pinter

Michael Offenberg

Kurt Weiblen

Jiri Marek

Dietrich Schubert

Georg Bischopink

Martin Willmann

Markus Lutz

Heribert Weber

Hans Artmann

Arnd Kaelberer

Frank Reichenbach

Juergen Kurle

Guenther Findler

Frank Henning

Roland Scheuerer

Franz Laemer

Joerg Muchow

Bernhard Lucas

Frank Schatz

Eckhard Graf

Klaus Heyers

Hans-Peter Trah

Thomas Beez

Rolf Becker

Herbert Olbrich

Andreas Kugler

Matthias Illing

Frank Bantien

Heinz Eisenschmid

Juergen Seiz

Harald Emmerich

Michael Fehrenbach

Eberhard Moess

Christoph Treutler

Steffen Schmidt

Martin Schoefthaler

Andreas Lock

Uwe Lipphardt

Ralf Schellin

Joachim Dutzi

Karl Bender

Detlef Gruen

Manfred Leiter

Jurgen Kurle

Klaus Jaeckel

Peter Linke

Albrecht Schwille

Joerg Schaefer

Peter Eiberger

A device made of single-crystal silicon having a first side, a second side which is situated opposite to the first side, and a third side which extends from the first side to the second side, the first side and the second side each extending in a 100 plane of the single-crystal silicon, the third side extending in a first area in a 111 plane of the single-crystal silicon. The third side extends in a second area in a 110 plane of the single-crystal silicon. Furthermore, a production method for producing a device made of single-crystal silicon is described.

Device made of single-crystal silicon

A device made of single-crystal silicon having a first side, a second side which is situated opposite to the first side, and a third side which extends from the first side to the second side, the first side and the second side each extending in aplane of the single-crystal silicon, the third side extending in a first area in aplane of the single-crystal silicon. The third side extends in a second area in aplane of the single-crystal silicon. Furthermore, a production method for producing a device made of single-crystal silicon is described.

The invention relates to a sensor with at least one silicon-based micromechanical structure, which is integrated with a sensor chamber of a foundation wafer, and with at least one covering that covers the foundation wafer in the region of the sensor chamber, and to a method for producing a sensor. It is provided that in the sensor of the invention, the covering () comprises a first layer () (deposition layer) that is permeable to an etching medium and the reaction products, and a hermetically sealing second layer () (sealing layer) located above it, and that in the method of the invention, at least the sensor chamber () present in the foundation wafer () after the establishment of the structure () is filled with an oxide (), in particular CVD oxide or porous oxide; the sensor chamber () is covered by a first layer () (deposition layer), in particular of polysilicon, that is transparent to an etching medium and the reaction products or is retroactively made transparent; the oxide () in the sensor chamber () is removed through the deposition layer () with the etching medium; and next, a second layer () (sealing layer), in particular of metal or an insulator, is applied to the deposition layer () and hermetically seals off the sensor chamber ().

Sensor with at least one micromechanical structure, and method for producing it

A sensor has a foundation wafer having a sensor chamber, at least one silicon-based micromechanical structure integrated with the sensor chamber of the foundation wafer, at least one covering that covers the foundation wafer in a region of the sensor chamber, the covering including a first layer which is a deposition layer and is permeable to an etching medium and reaction products, and a hermetically sealing second layer which is a sealing layer and located above the first layer, the deposition layer which is the first layer being permeable in a region of the sensor chamber to the etching medium and a reaction product, the deposition layer for being permeable having structures selected from the group consisting of etching openings, porous regions, and both.

Sensor with at least one micromechanical structure and method for production thereof

A method of producing structured wafers guarantees that the edge of the wafer will be protected from attack by an aggressive etchant medium without applying a photoresist to the edge and without using additional mechanical measures. In a type of negative process, a passivation layer is applied to the areas that are not to be structured, including the edge area of the wafer.

Method of producing structured wafers

A device, having at least one micromechanical surface structure patterned on a silicon substrate and a cap wafer covering the at least one surface structure. The cap wafer is formed from a glass wafer.

Micromechanical component

A micromechanical cap structure and a corresponding manufacturing method are described, the cap structure having a substrate, in particular in the form of a wafer, having a cavity made therein. The cavity includes a bottom surface and two pairs of opposite parallel side wall sections. The cavity has at least one stabilizing wall section, which connects two side wall sections. This considerably increases the stability of the cap structure.

Micromechanical cap structure and the respective manufacturing method

A micromechanical device, in particular an acceleration sensor, includes a seismic mass which is resiliently supported on a substrate via a first flexural spring device and which can be deflected in at least one direction by an acceleration, the deflection being able to be limited by a stop device. The stop device has at least one limit stop that is resiliently supported on the substrate via a second flexural spring device, the second flexural spring device having a greater flexural strength than the first flexural spring device.

Micromechanical device

A housing for an electronic component has a bottom part, a wall part, a cover part which together are adapted to cover the electronic component, a contact spring provided on the cover part for producing an electrical connection with a terminal of the component, the cover part and the contact spring being formed as a one-piece integral element.

Housing for electronic component, and method of producing the same

A method for manufacturing semiconductor components having micromechanical structures, micromechanical structures being patterned in a wafer for detecting a physical quantity acting on micromechanical structures, and semiconductor components for converting the physical quantity into an electrical signal proportional to the physical quantity being produced. The semiconductor components and the micromechanical structures are defined in a self-aligning manner by process steps acting on one side of the wafer to produce semiconductor components.

Method for manufacturing semiconductor components having micromechanical structures

A wafer stack with sensor elements hermetically sealed in caverns and a method of fabricating the sensors permitting a reduction in the size of the sensors formed after cutting the wafer stack and also yielding considerable savings in chip area in the manufacture of the wafer stack. The wafer stack includes bonding strips arranged between the individual sensor elements. The wafer stack is diced to form individual sensors by sawing in the middle through the bonding strips.

Wafer stack and method of producing sensors

In an angular velocity sensor, an acceleration sensor is arranged on a resonator formed of a multilayer substrate and attached to a resonating bar. The multilayer substrate includes a top silicon layer, an insulating sacrificial layer arranged below the top silicon layer, and a bottom silicon layer arranged below the insulating sacrificial layer. An excitor causes the resonator to vibrate while a limit stop, configured out of the multilayer substrate, limits the movement of the resonator.

Angular velocity sensor with built-in limit stops

In a mass flow sensor having a frame of monocrystalline silicon and a membrane fixed therein, a heating element and, if indicated, temperature-measuring elements are provided on the membrane. A heat-conducting element, which extends from the membrane across the frame, is provided in the edge area of the membrane. The heating element, the heat-conducting element and, if indicated, temperature-measuring elements are patterned out of a single metal layer.

Mass flow sensor

An anodic bonding method allows uniform pressure on the components to be bonded. This is achieved in that the components which are bonded are structured such that cavities are formed between the components. The cavities are evacuated and the components are thus pressed together during bonding.

Method for producing a component according to the anodic bonding method

A semiconductor chip, which is preferably designed as a pressure sensor, has on its rear side one or more depressions in which the pressure is measured by correspondingly designed diaphragms which are coupled to piezosensitive circuits. The surface of the depressions and, optionally, the rear side of the semiconductor chip are coated with a protective layer which ensures that the semiconductor is protected from aggressive media. The protective layer thereby makes it possible to use the sensor universally in acids, lyes or hot gases.

Semiconductor sensor having a protective layer

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Gomaringen, Germany

Helmut Baumann