Intel Corporation

Heli Chetanbhai Vora

Marko Radosavljevic

Han Wui Then

Sansaptak W Dasgupta

Walid M Hafez

Paul B Fischer

Rahul Ramaswamy

Nidhi Nidhi

Johann Christian Rode

Embodiments include a transistor and methods of forming a transistor. In an embodiment, the transistor comprises a semiconductor channel, a source electrode on a first side of the semiconductor channel, a drain electrode on a second side of the semiconductor channel, a polarization layer over the semiconductor channel, an insulator stack over the polarization layer, and a gate electrode over the semiconductor channel. In an embodiment, the gate electrode comprises a main body that passes through the insulator stack and the polarization layer, and a first field plate extending out laterally from the main body.

Antenna gate field plate on 2DEG planar FET

Growing community of inventors

Hillsboro, OR, United States of America

Heli Chetanbhai Vora