Robert Boschgmbh

Helga Uebbing

Richard Spitz

Alfred Goerlach

Barbara Will

Franz Laermer

Andrea Schilp

Ning Qu

Doerte Eimers-Klose

Christian Adamski

Roland Riekert

A method for eliminating eruptions, impurities, and/or damage in a crystal lattice by selectively etching silicon elements of surface-plated and sawn-out parts of a silicon wafer. At least areas of the silicon elements are brought into contact with a gaseous etching medium that etches silicon selectively in a chemical reaction, and gaseous reaction products are produced during etching. An interhalogen or fluorine-noble gas compound that is in a gaseous state or was converted to the gaseous phase may be used as the etching medium. The method is believed to be suitable for producing power diodes sawn from a wafer or for overetching fully mounted individual diodes.

Method for removing defects from silicon bodies by a selective etching process

A method is proposed for producing semiconductor components, in which at least one doped region is introduced in a wafer, a solid glass layer provided with dopant being applied on at least one of the two sides of a semiconductor wafer, in another step, the wafer being heated to high temperatures so that the dopant from the glass layer penetrates deep into the wafer to produce the at least one doped region; and in a further step, the glass layer being removed. The method is used for producing homogeneous, heavily doped regions, it also being possible to introduce these regions in the wafer on both sides and for the regions to be of different doping type.

Method for producing highly doped semiconductor components

It is proposed to implement the emitter short-circuit structure of a multilayer diode by providing grooves which cut through topmost layer of the multilayer diode. A metal layer applied thereon electrically shorts the topmost layer to subjacent layer

Multi-layer diodes and method of producing same

Growing community of inventors

Reutlingen, Germany

Helga Uebbing