Varian Semiconductor Equipment Associates, Inc.

Helen L Maynard

George D Papasouliotis

Vikram Singh

Ludovic Godet

Frank Sinclair

Julian G Blake

Svetlana Radovanov

Timothy J Miller

Benjamin B Riordon

Deepak Arabagatte Ramappa

Kamal Hadidi

Christopher R Hatem

Nicholas P T Bateman

Alexander C Kontos

Jun Seok Lee

Bernard Lindsay

Harold M Persing

Heyun Yin

Deven Raj Mittal

Hans-Joachim L Gossman

Siamak Salimian

Qi Gao

A method of processing a workpiece is disclosed, where the interior surfaces of the plasma chamber are first coated using a conditioning gas that contains the desired dopant species. A working gas, which does not contain the desired dopant species, is then introduced and energized to form a plasma. This plasma is used to sputter the desired dopant species from the interior surfaces. This dopant species is deposited on the workpiece. A subsequent implant process may then be performed to implant the dopant into the workpiece. The implant process may include a thermal treatment, a knock in mechanism, or both.

Plasma doping using a solid dopant source

A method of conformally doping a device on a semiconductor workpiece is disclosed. An oxide layer is applied to all surfaces of the device. Further, the thickness of the oxide layer on each surface is proportional to the energy that ions impact that particular surface. For example, ions strike the horizontal surfaces at nearly a normal angle and penetrate more deeply into the workpiece than ions striking the vertical surfaces. After creating an oxide layer that has a variable thickness, a subsequent dopant implant is performed. While ions strike the horizontal surfaces with more energy, these ions pass through a thicker oxide layer to penetrate the workpiece. In contrast, ions strike the vertical surfaces with less energy, but traverse a much thinner oxide layer to penetrate the workpiece. The result is a conformally doped device.

Self-compensating oxide layer

Techniques for plasma processing a substrate are disclosed. In one particular exemplary embodiment, the technique may be realized with a method comprising introducing a feed gas proximate to a plasma source, where the feed gas may comprise a first and second species, where the first and second species have different ionization energies; providing a multi-level RF power waveform to the plasma source, where the multi-level RF power waveform has at least a first power level during a first pulse duration and a second power level during a second pulse duration, where the second power level may be different from the first power level; ionizing the first species of the feed gas during the first pulse duration; ionizing the second species during the second pulse duration; and providing a bias to the substrate during the first pulse duration.

Techniques for plasma processing a substrate

A novel technique for manufacturing bit patterned media is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for manufacturing bit pattern media. The technique, which may be realized as a method comprising: forming a non-catalysis region on a first portion of a catalysis layer; forming a non-magnetic separator on the non-catalysis region; and forming a magnetic active region on a second portion of the catalysis layer adjacent to the first portion of the catalysis layer.

Technique for manufacturing bit patterned media

A plasma processing method is provided. The plasma processing method includes using the after-glow of a pulsed power plasma to perform conformal processing. During the afterglow, the equipotential field lines follow the contour of the workpiece surface, allowing ions to be introduced in a variety of incident angles, especially to non-planar surfaces. In another aspect of the disclosure, the platen may be biased positively during the plasma afterglow to attract negative ions toward the workpiece. Various conformal processing steps, such as implantation, etching and deposition may be performed.

Pulsed plasma to affect conformal processing

A method and apparatus are described herein which allow the progression of delamination of a film to be monitored. An interferometer is used to detect the onset and progression of thin film delamination. By projecting one or more wavelengths at a surface, and measuring the reflectance of these projected wavelengths, it is possible to monitor the progression of the delamination process. Testing has shown that different stages of the delamination process produce different reflectance graphs. This information can be used to establish implantation parameters, or can be used as an in situ monitor. The same techniques can be used for other applications. For example, in certain implantation systems, such as PECVD, a film of material may developed on the walls of the chamber. The techniques described herein can be used to monitor this separation, and determine when preventative maintenance may be performed on the chamber.

Apparatus for detecting film delamination and a method thereof

A method of processing a substrate having horizontal and non-horizontal surfaces is disclosed. The substrate is implanted with particles using an ion implanter. During the ion implant, due to the nature of the implant process, a film may be deposited on the surfaces, wherein the thickness of this film is thicker on the horizontal surfaces. The presences of this film may adversely alter the properties of the substrate. To rectify this, a second process step is performed to remove the film deposited on the horizontal surfaces. In some embodiments, an etching process is used to remove this film. In some embodiments, a material modifying step is used to change the composition of the material comprising the film. This material modifying step may be instead of, or in addition to the etching process.

Technique for processing a substrate having a non-planar surface

Various methods of utilizing the physical and chemical property differences between amorphized and crystalline silicon are used to create masks that can be used for subsequent implants. In some embodiments, the difference in film growth between amorphous and crystalline silicon is used to create the mask. In other embodiments, the difference in reflectivity or light absorption between amorphous and crystalline silicon is used to create the mask. In other embodiments, differences in the characteristics of doped and undoped silicon is used to create masks.

Self-aligned masking for solar cell manufacture

An apparatus and method are provided which allow the low cost patterned deposition of material onto a workpiece. A stencil mask, having chamfered edges is applied to the surface of the workpiece. The material is then deposited onto the workpiece, such as by PECVD. Because of the chamfered edges, the material thickness is much more uniform than is possible with traditional stencil masks. Stencil masks having a variety of cross sectional patterns are disclosed which improve deposition uniformity.

Stencil mask profile

A method is disclosed for enhancing tensile stress in the channel region of a semiconductor structure. The method includes performing a series of ion implantation steps at predetermined implant energies to implant carbon ions deep within the semiconductor structure to create a strain layer. The strain layer is annealed using a millisecond anneal process. Subsequent ion implantation steps are used to dope the source/drain region, and the source/drain extension with phosphorus ions, so that the doped regions remain above the strain layer. A second millisecond anneal step activates the source/drain region and the source/drain extension. The strain layer enhances carrier mobility within a channel region of the semiconductor structure, while also preventing diffusion of P within the structure.

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North Reading, MA, United States of America

Helen L Maynard