Elfys Oy

Aalto University Foundation

Aalto-korkeakoulusaatio

Teknillinen Korkeakoulu

Aalto University Foundation Sr

Hele Savin

Antti Haarahiltunen

Mikko Juntunen

Ville Vähänissi

Juha Heinonen

Marko Veli Yli-Koski

Päivikki Repo

Chiara Modanese

Toni Pasanen

This disclosure relates to a radiation sensor element comprising a semiconductor substrate, having a bulk refractive index; a front surface; a back surface, extending substantially along a base plane; and a plurality of pixel portions. Each pixel portion comprises a collection region on the back surface and a textured region on the front surface. The textured regions comprise high aspect ratio nanostructures, extending substantially along a thickness direction perpendicular to the base plane and forming an optical conversion layer, having an effective refractive index gradually changing towards the bulk refractive index to reduce reflection of light incident on said pixel portion from the front side of the semiconductor substrate.

Radiation sensor element and method

A layered semiconductor structure with a width in a lateral direction, having an operating area covering part of the width of the semiconductor structure, comprises a semiconductor substrate with majority charge carriers of a first polarity; and a first dielectric layer with inducing net charge of the first polarity on the semiconductor substrate. An induced junction is induced in the semiconductor substrate by an electric field generated in the semiconductor substrate by the inducing net charge. The semiconductor structure is configured to confine the electric field generated in the semiconductor substrate in the operating area.

Semiconductor structures and manufacturing the same

A photodetector structure comprises a semiconductor substrate extending substantially along a horizontal plane and having a bulk refractive index and a front surface defining a front side of the photodetector structure. The front surface comprises high aspect ratio nanostructures forming an optical conversion layer having an effective refractive index gradually changing towards the bulk refractive index to reduce reflection of light incident on the photodetector structure from the front side thereof. Further, the semiconductor substrate comprises an induced junction.

Photodetector structures and manufacturing the same

A method () for decreasing an excess carrier induced degradation in a silicon substrate, includes providing () a charged insulation layer capable of retaining charge on the silicon substrate for generating a potential difference between the charged insulation layer and the silicon substrate, and heat treating () the silicon substrate for enabling an impurity causing the excess carrier induced degradation and being in the silicon substrate to diffuse due to the potential difference into a boundary of the silicon substrate and the insulation layer.

Method for decreasing an excess carrier induced degradation in a silicon substrate

The invention presents a method for determining the copper concentration of the substrate using the photoconductivity method in a new manner, the method comprising steps in which the photoconductivity property of the substrate is measured for a first time by an arrangement, the surface of the substrate is illuminated by illuminating means emitting photon radiation, the photoconductivity property of the substrate is measured for a second time by an arrangement, and the copper concentration of the substrate is determined from the change between the first and second time of measurement on the basis of the illumination. The invention also presents an arrangement and a software product for determining the copper concentration.

Growing community of inventors

Espoo, Finland

Hele Savin