Siemens Aktiengesellschaft

Infineon Technologies Ag

Heinz Zitta

Erich Scheikl

Herbert Gietler

Silvester Strauss

A method determines a change in the activation state of an electromagnetic actuator.

Determining a change in the activation state of an electromagnetic actuator

An apparatus, comprising a transistor having a source/drain node and a gate, and a circuit coupled between the source/drain node and the gate and configured to limit a voltage between the source/drain node and the gate to a clamping voltage such that the clamping voltage is reduced in response to a rising temperature of the transistor. Also, a method, comprising measuring a first temperature, measuring a second temperature, and reducing a clamped voltage between a source/drain node of a transistor and a gate of the transistor responsive to a difference between the first and second temperatures increasing.

Temperature dependent clamping of a transistor

An integrated circuit arrangement includes connection terminals, an undervoltage detector, and at least one circuit unit. The connection terminals are configured to receive a supply voltage. The undervoltage detector is coupled between the connection terminals and is configured to compare the supply voltage with a select reference value selected from a first reference value and a second reference value. The second reference value is less than the first reference value. The undervoltage detector is further operable to produce a detector signal on the basis of a result of the comparison. The circuit unit is coupled between the connection terminals, and includes a first operating state with a first drawn current and a second operating state with a second drawn current. The second drawn current exceeds the first drawn current. The select reference value corresponds to an operating state of the at least one circuit unit.

Integrated circuit with an undervoltage detector

A drive circuit for a field-effect-controlled semiconductor component reduces a charging current for driving the field-effect-controlled semiconductor component when a load current limiting responds. That prevents an increase in current consumption of the drive circuit while maintaining a short switching time.

Drive circuit for a field-effect-controlled semiconductor component

A circuit configuration for undervoltage detection of a voltage source includes a reference voltage source being fed by the voltage source and having a first output, a second output, and a device for generating an enable signal at the second output only whenever a reference voltage has attained a stable value. A voltage divider divides a voltage furnished by the voltage source and supplies an output voltage. A comparator has a first input connected to the first output of the reference voltage source, a second input receiving the output voltage of the voltage divider, an output for supplying a detection signal, and a switching device being triggered by the enable signal for enabling the output of the comparator only after the enable signal has been generated.

Circuit configuration for detecting undervoltage

An assembly has an MOS power transistor with an output circuit and an input circuit, a load connected in series with the output circuit of the MOS power transistor, and a control stage for controlling the input circuit of the MOS power transistor. A circuit configuration for triggering the MOS power transistor includes a constant current source and a switchable auxiliary current source connected parallel to the constant current source for feeding the control stage. The auxiliary current source is turned off at a predetermined period of time after an onset of a control event for the MOS power transistor.

Power MOSFET driver having auxiliary current source

A pulse width modulator configuration in complementary MOS circuit technology includes two comparators for comparing an input signal with two reference signals and producing results of the comparison. Output stages are associated with the comparators. The output stages are interconnected for logically linking the results of the comparison.

CMOS pulse width modulator

A circuit configuration in complementary MOS technology includes a comparator having two input transistors forming an input differential stage, a current source supplying the input transistors, first and second load transistors being driven by the input transistors, and an output. An output driver circuit has at least one first output transistor being controlled the output of the comparator, and a second output transistor complementary to the at least one first output transistor. The input transistors have symmetrical geometries and the load transistors have asymmetrical geometries generating a given operating characteristic of the comparator. The output driver circuit is geometrically adapted to the given operating characteristic.

CMOS differential comparator with offset voltage

A circuit configuration in complementary MOS technology for generating a reference voltage independent of temperature with the aid of a bandgap circuit includes first and second bipolar transistors having first and second base-to-emitter threshold voltages and interconnected base connections, and first and second field effect transistors. A first series circuit includes the output circuit of the first bipolar transistor, a first resistor being connected to the first bipolar transistor and defining a first connecting point therebetween, and the output circuit of the first field effect transistor being connected between terminals of a supply voltage source. A second series circuit which is parallel to the first includes the output circuit of the second bipolar transistor, series-connected second and third resistors defining a second connecting point therebetween, and the output circuit of the second field effect transistor. An operational amplifier has inputs connected to the first and second connecting points and an output controlling the field effect transistors. A bandgap circuit has an output at the drain connection of the second field effect transistor being fed back to the base connections of the bipolar transistors.

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Drobollach, Austria

Heinz Zitta