Schott Glaswerke

Heinz-Werner Etzkorn

Volker Paquet

Ralf T Kersten

Ulrich Ackermann

Uwe Rutze

Harald Krummel

Gunter Weidmann

Uwe Ruetze

To coat several cap-shaped substrates simultaneously in an economical way with the same and high quality, several coating chambers are connected into a cap coating station by a symmetrical gas line system with a common gas generator and by another gas line system with a common vacuum pump. The gas lines have a cross sectional area Q.sub.A (x) and a cross sectional form Q.sub.F (x) which as a function of the distance x from the gas generator or from the vacuum pump are substantially the same. In this way, the same flow conditions are assured in all coating chambers. The gas line systems can be formed by precision pipes or by a stack of solid plates, in which gas ducts are introduced by boring or milling. Several cap coating stations, which are connected by suitable symmetrical gas line systems with a common vacuum pump and a common gas generator, can be combined to form a unit.

Apparatus for coating cap-shaped substrates

A plasma or photo-induced chemical vapor deposition coating process and apparatus are provided for applying thin dielectric coatings on planar, curved, and large area substrates. A plasma is generated in a tubular outer conductor. This plasma or the UV radiation occurring in the plasma passes through an opening into a reaction chamber. The opening preferably extends axially along the outer conductor and communicates with the interior of the reaction chamber. At least one component of the reaction gas is introduced directly to the opening or into the reaction gas is introduced directly to the opening or into the reaction chamber adjacent to the opening, bypassing the outer conductor. In this apparatus, the reactive deposition of a coating onto a substrate occurs only in the reaction chamber and below the opening from the outer conductor.

CVD coating process for producing coatings and apparatus for carrying

A plasma or photo-induced chemical vapor deposition coating process and apparatus are provided for applying thin dielectric coatings on planar, curved, and large area substrates. A plasma is generated in a tubular outer conductor. This plasma or the UV radiation occurring in the plasma passes through an opening into a reaction chamber. The opening preferably extends axially along the outer conductor and communicates with the interior of the reaction chamber. At least one component of the reaction gas is introduced directly to the opening or into the reaction chamber adjacent to the opening, bypassing the outer conductor. In this apparatus, the reactive deposition of a coating onto a substrate occurs only in the reaction chamber and below the opening from the outer conductor.

Plasma-enhanced CVD coating process

A process is provided for producing a planar glass substrate coated with a dielectric layer system in which the individual layers are formed by a chemical vapor deposition coating process. After the layers have been applied, the glass substrate is either drawn, compressed, or its surface enlarged until the coating layers are reduced in thickness. A planar glass substrate having a multiplicity of extremely thin dielectric layers can be fabricated according to this process.

Growing community of inventors

Neu-Ansbach, Germany

Heinz-Werner Etzkorn