Sal, Inc.

Heinz Siegert

Robert Allen Selzer

Robert Harrison Macklin

Franz Ludwig Rauch

Klaus Simon

Joe Baker Gagnon

William Rudolf Friml

The present invention is directed to the production of high quality semi-conductor devices created at speeds and in sizes that far exceed current x-ray lithography capabilities. The steps involved in the method include the use and development of horizontal beams from a synchrotron or point source of x-ray beams; preparation of submicrometer, transverse horizontal and vertical stepper stages and frames; providing a stepper base frame for the proper housing and mating of the x-ray beam; minimizing the effects of temperature and airflow control by means of a environmental chamber; transporting, handling and prealigning wafers and other similar items for tight process control; improving the control and sensing of positional accuracy through the use of differential variable reluctance transducers; controlling the continuous gap and all six degrees of freedom of the wafer being treated with a multiple variable stage control; incorporating alignment systems using unambiguous targets to provide data to align one level to the next level; beam transport, shaping or shaping devices, to include x-ray point sources; using an inline collimator or concentrator for collimating or concentrating the x-ray beams; and, imaging the mask pattern at the precise moment for optimum effectiveness.

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Williston, VT, United States of America

Heinz Siegert