Alcatel N.v.

Cambridge Enterprise Limited

Universitãt Stuttgart

Heinz Schweizer

Harald Giessen

Michael Schilling

Klaus Wunstel

Olaf Hildebrand

Kaspar Dutting

Wilfried Idler

Albrecht Mozer

Dieter Baums

Gert Laube

Axel Rumberg

Manfred Berroth

Michael C Gwinner

Hartmut Eisele

Ulrich Spalthoff

Hedwig Gräbeldinger

Liwei Fu

A semiconductor laser that is monolithically integrated on a substrate and whose cavity has a branched structure that is simply contiguous in a topological sense, and which includes a plurality of regions that enclose the cavity, is operated as a mode-locked semiconductor laser, with an alternating current flowing through at least one region in addition to a direct current. The frequency of the alternating current is related to the reciprocal of the round-trip time or an integral multiple of this reciprocal of light pulses generated by the alternating current in the semiconductor laser.

Method of operating a semiconductor laser as a mode-locked semiconductor

A semiconductor laser which includes a controllable beam splitter has three segments including laser-active zones and a monitor diode forming a cross-shaped laser connected with one another by way of the beam splitter. The beam splitter is equipped with electrodes for controlling optical coupling between the segments.

Interferometric semiconductor laser

A semiconductor laser in which the photons injected from its waveguide region into the laser active region are those whose energies differ from the energy sum of the chemical potential of the electron-hole pairs and the energy of the longitudinal acoustic phonons by less than one-half the thermal energy is described. A current directed into the photon emission region in the area of the Bragg grating causes photons of this energy to be injected into the laser active region which is constituted of a layer of indium gallium arsenide phosphide.

Electrically wavelength tunable semiconductor laser

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Stuttgart, Germany

Heinz Schweizer