Robert Boschgmbh

Plessey Semiconductors Limited

Heinz Pfizenmaier

Ewald Schmidt

Juergen Hasch

Hans Irion

Klaus Voigtlaender

Gerhard Conzelmann

Klaus-Peter Wagner

Steffen Leutz

Joerg Schneemann

Brian Prime

David Dawson

Helmut Schneider

Volker Dudek

Bernhard Lucas

Uwe Skultety-Betz

Bjoern Haase

Ulli Hoffmann

Werner Grunwald

Claudio De La Prieta

Klaus Winter

Thomas Beez

Kurt Schmid

Ulrich Mahr

Stefan Clauss

Wolfgang Appel

Colin Nash

Hans-Peter Petry

Paul Lowbridge

Philip Blakelock

Franz Strauss

Helmut Baum

Franz Straus

A compact radar device that can be produced with little complication has at least one cavity () with a radiation element () disposed therein and a shielded chamber () for electrical circuits (). A housing () is designed in such a manner that it defines both the shielded chamber () for the electrical circuits () and the at least one cavity () for the at least one antenna radiation element (). A printed board () carries the electrical circuits () and is inserted into the housing () between the two chambers () as a shielding partition. The antenna radiation element () is electrically coupled to the two conductor arms to a feed network on the printed board () via contact pins ().

Integrated circuit for a radar device in a hermetically sealed housing comprising a patch antenna formed from a bent component from sheet metal

It is provided that the semiconductor component is a component of a semiconductor circuit () comprising a first silicon layer (), an adjoining silicon dioxide layer (insulating layer ()) and a subsequent further silicon layer (structured layer ()) (SOI wafer), and the semiconductor component comprises an IMPATT oscillator (), having a resonator () which includes a metallized cylinder () of silicon, disposed in the structured layer (); a coupling disk () covering the cylinder () in the region of the first layer (); and an IMPATT diode (), communicating with the cylinder () of the resonator () via a recess () in the coupling disk (); and a reference oscillator () of lower frequency, having a resonator () which includes a metal cylinder () of silicon, disposed in the structured layer (), and coupling disk () covering the cylinder in the region of the first layer (); and a microwave conductor, communicating with the cylinder () of the resonator () via a recess () in the coupling disk (), and the reference oscillator, via an active oscillator circuit (), serves the purpose of frequency stabilization of the IMPATT oscillator (); with integrated Schottky diodes; and a transmitting and receiving antenna ().

Intergrated semiconductor component for high-frequency measurement and use thereof

The invention relates to a micromechanical resonator having a bondable resonance body and a method for fabricating a micromechanical resonator for semiconductor components. The invention provides that the resonator () is composed successively of a first layer () of silicon for coupling the resonator () in terms of a circuit, an insulating layer () of silicon dioxide, a cylindrical base layer (cylinder), and a metal layer () completely surrounding the cylinder (). The method provides that a cylindrical structure () (cylinder) is etched (trench etching process) in a base layer () of p-doped silicon (SOI wafer) separated from a layer () of silicon by an insulating layer (), and the cylindrical structure () is coated with a metal layer ().

Micromechanical resonator having a metal layer surrounding a cylinder formed in a base layer

A high frequency oscillator for an integrated semiconductor circuit is a component of the semiconductor circuit, which is comprised of a first silicon layer, an adjoining silicon dioxide layer (insulation layer), and an additional subsequent silicon layer (structured layer), (SOI wafer), wherein the high frequency oscillator is comprised of a resonator with a metallized cylinder made of silicon disposed in the structured layer and a coupling disk that overlaps the cylinder in the vicinity of the layer, and an IMPATT diode that is connected to the cylinder of the resonator via a recess in the coupling disk.

High-frequency oscillator for an integrated semiconductor circuit and the use thereof

The invention relates to a locator, in particular a handheld locator for detecting inclusions in walls, ceilings and/or floors, having a capacitive sensor device disposed in a housing, having means for generating a detection sensor of the at least one capacitive sensor device, having a control and evaluation unit, communicating with the sensor device, for ascertaining measurement values from the detection sensor, and having an output unit for reproducing measurement values of the capacitive sensor device. According to the invention, it is proposed that a measuring capacitor () of the capacitive sensor device () has a first electrode (), which includes one face of the housing () of the sensor device ().

Locating device

The device has a printed-circuit board ( ), on one side of which at least one antenna ( ) is located and, on the other side of which electrical circuits ( ) are located. An electromagnetic shield between the antenna ( ) and the electrical circuits ( ) is realized in a manner that is simple with regard for production engineering by locating a feeder network ( )&mdash;developed using a coplanar circuit technique and with which the at least one antenna ( ) is contacted&mdash;on the antenna-side surface of the printed-circuit board ( ), and by covering the antenna-side surface of the printed-circuit board ( ) with the connected-to-ground outer conductor ( ) of the coplanar circuit to such an extent that the required shield between the antenna ( ) and the electrical circuits ( ) is produced as a result.

Device for the transmission and /or reception of radar beams

The microwave sensor produces an electrical output signal according to a position or displacement of a movable mechanical part ( ), especially a valve needle in an injector valve for injecting fuel into an internal combustion engine. This position or displacement sensor includes a cavity resonator ( ) provided with walls bounding a cavity ( ) dimensioned for microwaves of a predetermined frequency and an antenna ( ) for reception of the microwaves in the cavity. The end ( ) of the movable mechanical part ( ) protrudes into the cavity. A hybrid evaluating circuit ( ) is connected with the antenna, which detects changes in the microwave radiation fed into and coupled out of the cavity, e.g. phase relationships, which depend on the position of the mechanical part ( ), so that small position changes in very tight spaces are accurately determined.

Microwave sensor for determining position for displacement of a movable part, such as a valve needle

Lens arrangement suited for focusing radar waves

According to the invention, a monostatic FMCW radar sensor for a vehicle for detecting objects is proposed in which at least one antenna feed in combination with a dielectric lens is embodied for both transmitting and receiving a corresponding echo signal. At least one antenna feed is connected to a ring mixer via a ratrace ring or double ratrace ring, so that an expensive circulator can be dispensed with. The high-frequency structure is advantageously embodied in planar microstrip form. A plurality of transmission and reception antennas are focused via one common lens.

Monostatic FMCW radar sensor

In a device for directional transmission and/or receiving of electromagnetic waves, including at least one antenna element and a dielectric lens, there is arranged between them a prefocusing dielectric body for avoiding overradiation of the lens. In order to simplify adjustment, the lens has an extended surface, is preferably pot-shaped, and forms, in conjunction with a baseplate, a hermetically sealed housing for unencapsulated ICs.

Device for directional transmission and/or receiving of electromagnetic

A transistor component is suited for controlling large currents, even given high frequencies. The transistor component includes integrated emitter resistors which are arranged between partial-emitter regions and emitter-metal contacts. The integrated emitter resistors cause a stabilized, uniform current distribution both over the various partial-emitter regions, and within the partial-emitter regions, and bring about an improved current carrying capacity, as well as improved high-frequency properties, particularly in view of the finite magnitude of the extrinsic base resistance.

Transistor component having an integrated emitter resistor

Radar system, in particular motor vehicle radar system

Head lamp with integrated microwave antenna

A radar transmitter/receiver arrangement for use, for example, in automotive vehicle control in which R.F. energy from a frequency modulated oscillator is applied to an antenna for transmission and to one input of a mixer by way of a rat-race device, and RF energy reflected from a target and received at the antenna is applied to another input of the mixer by way of the rat-race device.

Radar transmitter/receivers

High-frequency power transistor

Growing community of inventors

Leonberg, Germany

Heinz Pfizenmaier