Micronas Gmbh

Deutsche Itt Industries Gmbh

Albert-ludwigs-universitat Freiburg

Heinz-Peter Frerichs

Christoph Wilbertz

Tobias Kolleth

Mirko Lehmann

Ingo Freund

Jürgen Rühe

Christoph Senft

Hans-Günter Zimmer

Ingo Dipl-Ing Freund

JDJeyaprakash S Samuel

A fastening device is provided that includes a semiconductor body with an integrated circuit, and a dielectric passivation layer formed on the surface of the semiconductor body, and a trace formed underneath the passivation layer, and an oxide layer formed beneath the trace, and a connecting component that forms a frictional connection between a component formed above the passivation layer and the semiconductor body, wherein a formation passing through the passivation layer and the oxide layer and having a bottom surface is formed, and a conductive layer is formed on the bottom surface and the connecting component forms an electrical connection between the conductive layer and the component.

Fastening device

A humidity sensor has, on a substrate, at least one voltage sensor with a sensor region and at least one control electrode. The control electrode is connected to a signal source which is designed such that a variable control voltage can be applied to the control electrode. A moisture-permeable sensor layer whose dielectric constant depends on humidity is located on the sensor region. The control electrode is adjacent to the sensor layer in such a manner that the measured voltage signal of the voltage sensor depends on the control voltage and the humidity. The voltage sensor is connected to an analysis unit for ascertaining the humidity on the basis of the measured voltage signal. In the vertical projection onto the plane in which the substrate extends, the control electrode is located laterally next to the sensor region.

Humidity sensor

A semiconductor gas sensor is provided that includes a semiconductor body with a passivation layer formed on a surface of thereof. A gas-sensitive control electrode is separated from a channel region by a gap or a control electrode is arranged as a first plate of a capacitor with a gap and a second plate of the capacitor is connected to a gate of the field effect transistor implemented as a Capacitively Controlled Field Effect Transistor. The control electrode has is connected to a reference voltage. A support area is provided with a first support structure and a second support structure. A contact area is provided on the surface of the semiconductor body. A first contact region has a frictional connection and an electrical connection with the control electrode and the second contact region has at least a frictional connection with the control electrode.

Semiconductor gas sensor

The invention relates to a moisture sensor which comprises a receiving area on its surface for a moisture film, the layer thickness of which is dependent on the relative humidity in the surrounding of the receiving area. The moisture sensor has a signal source which is connected to at least one control electrode at at least one infeed, the electrode abutting the receiving area, for providing a control voltage to the moisture film. The moisture sensor comprises at least one potential sensor which has at least one sensor area, under the receiving area, which is spaced apart from the at least one infeed. The sensor area is electrically insulated from the receiving area by an insulation layer, located between the sensor area and the receiving area, in such a way that an electrical potential can be capacitively detected by means of the potential sensor, the potential being dependent on the layer thickness of the moisture film and the control voltage.

Moisture sensor and method for measuring moisture of a gas-phase medium

A device for detecting a gas or gas mixture has a first and a second gas sensor. The first gas sensor is a MOSFET, which comprises a first source, a first drain, a first channel zone disposed between the latter elements, and a first gas sensitive layer capacitively coupled to the first channel zone that contains palladium and reacts to a change in the concentration of the gas to be detected with a change in its work function. The second gas sensor has, in a semiconductor substrate, a second source, a second drain, and a second channel zone between the latter elements, which is capacitively coupled via an air gap to a suspended gate. The latter comprises a second gas sensitive layer that reacts to a change in the concentration of the gas to be detected with a change in its work function. The second gas sensitive layer is arranged on a support layer and faces the air gap. The support layer is formed by another semiconductor substrate, and the first gas sensor is integrated in the front side of the second semiconductor substrate facing away from the air gap.

Device for detection of a gas or gas mixture and method for manufacturing such a device

A gas sensor has a gas-sensitive layer with a surface area where the electron affinity depends on the concentration of a target gas brought in contact with the surface area. An electrical potential sensor is capacitively coupled to the surface area via an air gap. The surface area of the gas-sensitive layer is covered by an electric insulating layer that is inert to the target gas and is bonded to the gas-sensitive layer. The coating is designed in such a way that it is permeable for the target gas and a different, non-target gas that can be adsorbed on the surface area. The coating has different diffusion constants for the target gas and the non-target gas. The diffusion constants are coordinated with each other in such a way that the sensitivity of the gas sensor to the target gas increases when the target gas concentration exceeds a predetermined concentration threshold in the presence of the non-target gas.

Gas sensor

In a procedure for measuring the concentration of a target gas, a gas sensor is provided whose sensor signal at constant temperature is dependent on a target gas concentration and has a lower measurement sensitivity in a first modulation range than in a second modulation range. The position of the modulation ranges is dependent on the temperature. The temperature of the gas sensor is controlled so that the sensor signal is essentially independent of the target gas concentration and lies within the second modulation range. The temperature of the gas sensor is then a measurement for the target gas concentration.

Procedure for measuring the concentration of a gas

A gas sensor has at least one gas sensitive layer, which has at least one surface area in which the work function is dependent upon the concentration of a target gas capable of being brought into contact with the surface zone. At least one electric potential sensor is capacitatively coupled to the surface zone over an air gap. The surface zone of the gas sensitive layer is covered with an electrically insulating coating which is inert to the target gas and which is adhesively bound to the gas sensitive layer. The coating is configured so that it is permeable to the target gas and so that when the target gas contacts the surface zone of the gas sensitive layer, it prevents or at least impedes an alteration of the bound state of atoms and/or molecules bound to the surface zone and differing from the target gas.

A device for detecting a gas or gas mixture having at least one first gas sensor designed as an SGFET and at least&#x2014;one second, additional gas sensor designed as a Lundstr&#xf6;m-FET. The gas sensors are connected to a processing device designed to analyze the measurement signals from both types of gas sensors in order to detect the gas or gas mixture.

Device for detecting a gas or gas mixture

A field-effect transistor used as a sensor for measuring a gas or ion concentration utilizes a surface structure such as rings along with surface profiling, for example elevations of the rings and depressions therebetween, to decrease the surface conductivity between a guard ring and the FET, to thereby increase the concentration rise per unit time of a gas signal and increase the time for a potential on a channel region of the FET to approximate the potential on a guard ring. The rings, which may be arranged around the FET structure, may be defined by a surface material different from the remaining surface material and thus having different surface conductivities. The surface profiling, together with the rings, can be utilized to increase an amount of time that may describe the equalization of the channel region potential to the guard ring potential. The elevations may have a surface conductivity different from, for example smaller than, that of the depressions. The surface profiling may be formed by forming the elevations on a thick oxide layer and spaced a distance apart. The annular structures arranged on the thick oxide layer and defined by a surface material different from the remaining surface material may have different surface conductivities and thus may form different, for example higher, contact resistances.

Sensor for measuring a gas concentration or ion concentration

The semiconductor sensor has at least one field-effect transistor () which is coupled to a sensitive electrode and which has measuring phases that are interruptible by idle phases through a control device (). During the idle phases, the field-effect transistor or transistors () together with their terminals is or are connected to the same potential, preferably the ground potential.

Semiconductor sensor with a field-effect transistor

The invention relates to a sensor for measuring ion concentration or gas concentration, with a gas- or ion-sensitive layer () that has two sensitive partial areas (and), two conducting areas (and), each coupled capacitively through air gaps (and) with one of the sensitive partial areas (and), with the capacitances of the couplings being different, and a comparison circuit () which has at least one first transistor (T) connected with the first conductive area and a second transistor (T) connected with the second conductive area, and at least one output at which a signal can be tapped that depends on the potential of sensitive layer (

Sensor for measuring an ion concentration or gas concentration

The invention relates to a sensor for measuring a gas concentration or ion concentration which has a substrate (), a drain () formed on the substrate, a source () formed on the substrate, a channel area () of the substrate located between drain () and source (), a conductive guard ring () located outside the channel area, and a sensitive gate layer () whose potential depends on the surrounding gas or ion concentration, with an air gap () provided between the gate layer and channel area (). In order to create a sensor that can be made economically and compactly which nevertheless ensures exact measurement of a change in concentration with time, it is provided that surface profiling (and) be formed between guard ring () and channel area ().

An EPROM structure for a nonvolatile semiconductor memory includes a plurality of memory cells that each include a floating gate transistor ( ) that can be programmed by hot electrons and erased by UV light. An additional, common gate capacitance ( ) is associated with each memory cell to raise the potential at the floating gate transistor ( ) to the level required for writing by applying to the gate capacitances a predetermined voltage, common to all the memory cells.

EPROM structure for a semiconductor memory

A programmable semiconductor memory is disclosed which can be fabricated with an MOS process of low complexity and which takes up little space. The memory comprises a MOS field-effect transistor having an antifuse region between the gate electrode and the drain region. Prior to application of a programming voltage, the antifuse region electrically isolates the gate electrode and the drain region from each other. On application of the programming voltage to the gate electrode, which is greater than the supply voltage applied between the drain and the source, the antifuse region changes to a low-impedance state.

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St. Peter, Germany

Heinz-Peter Frerichs