Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh

Heinz J Rath

Dietrich Schmidt

Bernhard Authier

Johann Hofer

Process for the manufacture of silicon of large surface area bonded to a substrate, which comprises depositing silicon to a thickness of from 30 to 500 .mu.m onto panel-shaped substrates of glassy carbon (a glass-like carbon obtained by carbonizing a spatially cross-linked synthetic resin) that are heated by direct passage of an electric current to temperatures above the melting point of silicon, and thereafter cooling the silicon to a temperature below its melting point in the direction from its free surface toward the substrate. The invention also comprises the silicon panels so made which are especially useful in the manufacture of solar cells.

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Burghausen, Germany

Heinz J Rath