Osram Opto Semiconductors Gmbh

Siemens Aktiengesellschaft

Osram Ag

Osram Opto Semi-conductors Gmbh Co. Ohg

Osram Gesellschaft MIT Beschrankter Haftung

Heinz Haas

Martin Haushalter

Herbert Brunner

Peter Helbig

Gerhard Behr

Moritz Engl

Markus Hofmann

Joachim Reill

Thomas Reiners

Ralf Vollmer

Rainer Huber

Alois Biebl

Günther Hirschmann

Frank Möllmer

Stefan Hackenbuchner

Frank M&ouml;llmer

Hubert Halbritter

Georg Bogner

Bernhard Stojetz

Werner Spaeth

Norbert Stath

Johann Luft

Ernst Nirschl

Andreas Wojcik

Claus Jaeger

Michael Schwind

Wilhelm Karsten

Wolfgang Teich

Wojciech Giziewicz

Frank MÖLLMER

A method is provided for producing a plurality of optoelectronic components. A number of semiconductor chips are arranged on a connection carrier assembly. A frame assembly with a number of openings is arranged in such a way, relative to the connection carrier assembly, that the semiconductor chips are each arranged in one of the openings. A number of optical elements are positioned in such a way, relative to the frame assembly, that the optical elements cover the openings. The connection carrier assembly with the frame assembly and the optical elements is singulated into the number of optoelectronic components, such that each optoelectronic component includes one connection carrier with at least one optoelectronic semiconductor chip, one frame with at least one opening and at least one optical element.

Method for producing a plurality of opto-electronic components and opto-electronic component

An optoelectronic semiconductor component includes a lead frame with two lead frame parts and an optoelectronic semiconductor chip. The semiconductor chip is fitted to a first of the lead frame parts. A radiation-transmissive potting body of the semiconductor component mechanically connects the lead frame parts to one another. The potting body is set up for beam shaping. The first lead frame part has a reflector trough with a base surface on which the semiconductor chip is mounted. The reflector trough has a lateral surface with three sections. When seen in a plan view of the base surface, the sections revolve around the base surface and follow one another in a direction away from the base surface. In the first section, closest to the base surface, the lateral surface is oriented perpendicular to the base surface.

Reflecto trough for an optoelectronic semiconductor component

A motor vehicle headlight element is specified which has at least one light-emitting diode and at least one control apparatus. The control apparatus is suitable for processing a signal which is dependent on a measurement variable and for applying a current, corresponding to the signal, to the light-emitting diode. The control apparatus and the light-emitting diode are arranged on a common mount.

Motor vehicle headlight element

A light barrier comprising a semiconductor component () and to a method for detecting objects with a carrier (), a semiconductor chip () which detects an electromagnetic radiation, a semiconductor chip () which emits an electromagnetic radiation, and a direction-selective element (), which delimits an angle range of the radiation which can be received by the detecting semiconductor chip () and/or of the radiation to be emitted by the emitting semiconductor chip (), wherein a main radiation axis (V) of the radiation which can be received is tilted relative to a main radiation axis (U) of the radiation to be emitted.

Light barrier and method for detecting objects

A motor vehicle headlight element is specified which has at least one light-emitting diode and at least one control apparatus. The control apparatus is suitable for processing a signal which is dependent on a measurement variable and for applying a current corresponding to the signal, to the light-emitting diode. The control apparatus and the light-emitting diode are arranged on a common mount.

The invention concerns a radiation detector for detecting radiation having a defined spectral sensitivity distribution () that exhibits a sensitivity maximum at a defined wavelength &#x3bb;, wherein the radiation detector preferably contains a III-V semiconductor material and particularly preferably comprises at least one semiconductor chip () and at least one optical filter disposed after the semiconductor chip, the semiconductor chip containing at least one III-V semiconductor material and the optical filter absorbing radiation of a wavelength that is greater than the wavelength &#x3bb;of the sensitivity maximum.

Radiation detector with controlled spectral sensitivity distribution

A method for a quantitative detection of a linear movement or rotary movement. The method includes the steps of emitting radiation from at least two light emitters in a pulsed mode at a same clock frequency or different clock frequencies and detecting the radiation from the two light emitters by a detection device. It furthermore includes the steps of increasingly shadowing the radiations by a movable grid device or separating signals originating from different light emitters by an evaluation circuit coupled to said detection device.

Method for a quantitative detection of a linear and rotary movement

An optical device for quantitative detection of linear or rotary movements, in which light beams from two light emitters pass through a grid disk which images the movement and has translucent areas and opaque areas. A single photo receiver is also provided in which the transmitted light strikes the photo receiver. The light emitters are actuated in a pulsed mode. The pulses are separated from one another in an evaluation circuit that is coupled to the photo receiver.

Optical encoder for detecting rotary and linear movements

A radiation emitter component, in particular an infrared emitter component with a conventional light-emitting diode housing, includes two electrode connections, one of which has a well-shaped reflector. The housing has an optically transparent, electrically non-conducting encapsulation material. A semiconductor laser chip is fastened in a well-shaped reflector of the light-emitting diode housing. The semiconductor laser chip has a quantum well structure, in particular with a strained layer structure, for example MOVPE epitaxial layers with a layer sequence GaAlAs-InGaAs-GaAlAs. A diffusor material can be inserted into the optically transparent, electrically non-conducting material of the light-emitting diode housing. The diffusor material is constructed or inserted with regard to type and concentration in such a way that in connection with the semiconductor laser chip encapsulated in the light-emitting diode housing, a radiation characteristic curve or an increase of an effective emission surface is produced that is comparable to that of a conventional infrared light-emitting diode.

Radiation emitter component

The optoelectronic semiconductor component has an optoelectronic semiconductor chip disposed on a chip carrier with an approximately planar chip carrier surface. The semiconductor chip is fastened with predetermined alignment of its optical axis. A plastic base part supports the chip carrier. The semiconductor chip is electrically conductively connected to at least two electrode terminals routed through the base part, and a lens is disposed above the semiconductor chip on top of the base part. The lens is formed with an independently configured cap produced from plastic material. The cap is mechanically form-locked to a support of the base part. When the cap is placed onto the base part, a holder of the cap and the support engage with one another. The holder and the support are configured such that when the cap is placed onto the base part, the two parts are automatically positioned with respect to one another in such a way that the optical axes of the lens and of the semiconductor chip coincide.

Method for producing an optoelectronic semiconductor component

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Wuppertal, Germany

Heinz Haas