Siemens Aktiengesellschaft

Siemens Aktiengesellschaft & Semikron Gmbh

Heinz Amann

Leo Lorenz

Ernst Hebenstreit

Winfried Schierz

A discretely constructed MOSFET is switched by a voltage applied between gate terminal and source terminal. The source terminal has a self-inductance in which a fast change of the load current induces a considerable voltage which opposes the applied gate-source bias. This opposing voltage is reduced since the source contact is connected to an auxiliary terminal which is largely magnetically decoupled from the source terminal. A control voltage is applied between gate terminal and auxiliary terminal. When a plurality of MOSFETs are connected in parallel, oscillations in the control circuit can thus be effectively suppressed.

Semiconductor component having at least one power MOSFET

In a semiconductor arrangement having at least one semiconductor body located on an insulating substrate provided with interconnects, a low-inductance arrangement can be achieved in that the connecting leads are arranged in close proximity to one another and at least partially parallel to one another.

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Unterhaching, Germany

Heinz Amann