Matrix Sensors, Inc.

Maglabs, Inc.

Heinrich Sussner

Steven Yamamoto

Kochan Ju

Michael D Cable

David K Britt

Paul R Wilkinson

A device and method are provided for detecting analyte with correction for the effects of humidity. The device comprises a resonant sensor having an oscillating portion. A capacitor is positioned on the oscillating portion. The capacitor is formed by at least two electrodes and a sensing material positioned between the electrodes. A readout circuit is arranged to measure a response of the oscillating portion (e.g., frequency shift or change in resonance frequency, stiffness or strain) and a capacitance of the capacitor when substances are adsorbed or absorbed in the sensing material. This combination of measurements enables the device to distinguish between various types of adsorbed or absorbed molecules, especially distinguishing between an analyte of interest and water molecules that might interfere with the detection of the analyte. A processor determines an analyte value indicative of the presence, amount or concentration of the analyte in dependence upon measurements of both the response of the oscillating portion and the capacitance to account for the effects of water in the sensing material.

Gas sensor with humidity correction

Surface modifications to sensors in an array give the sensors different functionalities for adsorbing or binding molecules. A first sensor in the array includes a first resonating member having a first surface comprising a receptor material coated over a first underlying material. A second sensor includes a second resonating member having a second surface comprising the receptor material coated over a second underlying material that is different than the first underlying material. The first underlying material, the second underlying material, and the receptor material are selected such that the first resonating member, having a combination of the receptor material and the first underlying material, has a different ability to adsorb or bind a mass of one or more analytes than does the second resonating member having a combination of the receptor material with the second underlying material. Methods for fabricating sensors with surface modifications are also provided.

Array of sensors with surface modifications

A magnetic random access memory (MRAM) has multiple stacked memory layers, with each memory layer being a plurality of alternating rows of memory cells and electrically conductive access lines. The access lines in each layer are aligned with the access lines in the layers above and below. Similarly the memory cell rows in each layer are aligned with the memory cell rows in the layers above and below, with the memory cells in adjacent layers forming memory cell columns that extending perpendicularly from the MRAM substrate. The memory cells are connected to bit and word lines for addressing selected cells. The MRAM includes electrical circuitry connected to the access lines for directing currents through the access lines in the memory layer of the selected cell and in the access lines directly above or below to generate magnetic fields that switch the magnetic state of the selected cell without switching the magnetic state of non-selected cells in the memory layers above and below.

Magnetic random access memory with multiple memory layers and improved memory cell selectivity

The invention comprises a magnetic random access memory (MRAM) with stackable architecture. A first word line is configured to carry electric current. A first memory column is electrically coupled to the word line and is comprised of a plurality of memory cells electrically coupled and adjacent to each other. Each memory cell is configured to store data by magnetic alignment of the memory cell. A first bit line column is electrically isolated from the first word line and is magnetically coupled to and electrically isolated from the first memory column. The first bit line column comprises a plurality of bit lines that are electrically isolated from each other and configured to carry electric current during a memory read and a memory write. The first bit line column is parallel to the first memory column.

Growing community of inventors

Palo Alto, CA, United States of America

Heinrich Sussner