Daimler-benz Ag

Licentia Patent-verwaltungs Gmbh

Eupec Europaeische Gesellschaft Fuer Leistungshalbleiter Mbh & Co. Kg

Heinrich Schlangenotto

Jacek Korec

Friedhelm Sawitzki

Karl H Sommer

Karl-Heinz Sommer

Alexander Bodensohn

Franz Kaussen

Josef Serafin

Marius Fuellmann

Wolf-Dieter Nowak

Ronald Henson

Hermann Berg

Controllable semiconductor component

MOS-controlled thyristor using a source cathode elecrode as the gate

A power diode includes at least one semiconductor body having an inner zone f a first conductivity type and a given doping level, a cathode zone of the first conductivity type and a doping level higher than the given doping level, and an anode zone of a second conductivity type opposite the first conductivity type and a doping level higher than the given doping level. The inner zone has at least a first region with a first predetermined thickness being dimensioned for a required blocking voltage and a second region with a second thickness being greater than the first predetermined thickness by at least a factor of 1.4. The area and/or the minority carrier life of first and second partial diodes is dimensioned for causing a current flowing through the first partial diode in a conductive phase to be greater than a current flowing through the second partial diode by at least a factor of 2.

Power diode

Turn-off power semiconductor component with a particular ballast

Semiconductor element having a p-zone on the anode side and an adjacent,

The invention relates to a gate turn-off thyristor which includes, per unit cell, a cathode-side emitter strip and two anode-side spaced emitter strips which overlap in position with the edge of the cathode-side emitter strip. In such a GTO thyristor, the maximum disconnectable anode current greatly decreases during turn-off with increasing voltage rise rate, since the electrical fields developing in the non-regenerative transistor region centered underneath the cathode-side emitter strip are too high. Reduction of the field intensity occurring in the non-regenerative transistor region and thus reduction in the decrease of the maximum disconnectable anode current is realized, according to the invention, in that a p-type zone is disposed between the two anode-side emitter strips to dynamically limit the electrical field, with this p-type zone injecting holes to a lesser degree than the adjacent emitter strips and essentially only during turn-off of high currents.

Gate turn-off thyristor

The negative temperature coefficient effect, which results in destructive current flow above a certain temperature in a semiconductor device is counteracted by a layer of conductive material that has low resistance at normal temperatures but has a positive temperature coefficient that causes its resistance to rise to a high value at temperatures below the certain temperature. The layer is applied to electrodes of semiconductor devices to control current flowing therethrough.

Safety circuit for a semiconductor element

Growing community of inventors

Neu-Isenburg, Germany

Heinrich Schlangenotto