Semikron Elektronik Gmbh &co.kg

Semikron Elektronik Gmbh

Export-contor Aussenhandelsgesellschaft Mbh

Heinrich Heilbronner

Christian Göbl

Dejan Schreiber

Christian Goebl

Peter Beckedahl

Thomas Stockmeier

Werner Tursky

Thomas Frank

A method for producing a power electronic switching device comprising a substrate, having a power semiconductor component arranged thereon; a connection device, and terminal devices. The method comprises: Providing the substrate with an insulation ply and conductor tracks electrically insulated from one another, wherein a power semiconductor component is arranged on a conductor track and is cohesively connected thereto; Arranging the connection device embodied as a film stack; Arranging a thin pressure- and temperature-resistant and moisture-blocking insulation layer along a surface contour of the connection device and comprising a covering section and an overlap section, which overlaps the connection device circumferentially and covers the substrate in a circumferential contact region; Cohesively connecting the connection device to the substrate, whereby the connection device connects the switching device in a circuit-conforming manner internally; Connecting the covering section to the connection device; Connecting the overlap section to the contact region.

Method for producing a switching device with a moisture-tight and electrically insulating cover and for producing an arrangement therewith

A power semiconductor component having a basic body and at least one contact area. At least one first thin metallic layer of a first material is arranged on the contact area. A second metallic layer&#x2014;thicker than the first&#x2014;of a second material is arranged on the first material by a pressure sintering connection of said material. The associated method has the following steps: producing a plurality of power semiconductor components in a wafer; applying at least one first thin metallic layer on at least one contact area of a respective power semiconductor component; arranging a pasty layer, composed of the second material and a solvent, on at least one of the first metallic layers for each power semiconductor component; pressurizing the pasty layer; and singulating the semiconductor components.

Power semiconductor component with metal contact layer and production method therefor

Proposed is a power semiconductor module with a housing and one or a plurality of half-bridge circuitries arranged therein. Each half-bridge circuitry has a first (TOP) and a second (BOT) power switch and each switch is comprised of one power transistor and a corresponding power diode (recovery diode). The power semiconductor module furthermore has a positive polarity direct current lead and a negative polarity direct current lead. Per each half-bridge circuitry it furthermore has two alternate current leads that are not directly connected electrically. Each TOP transistor is connected to the power diode of the BOT switch and a first alternate current lead and each BOT transistor is connected to the power diode of the TOP switch and a second alternate current lead.

Power semiconductor module with reduced parasitic inductance

A circuit arrangement for a power semiconductor module provides low parasitic inductances and low loss. An electrically insulating substrate supports metallic ribbon connectors which in turn power attached semiconductor components. DC port conducts are positioned in close proximity to each other and are arranged in at least one partial sector parallel and in close proximity to the surface of the substrate and/or the ribbon connectors and electrically insulated from the same, and at least one AC port conductor is similarly attached. The port conductors include surface elements enabling simplified low-inductance wire bond connection from the port conductors to either the power semiconductor components or ribbon connectors or both.

Low-inductance circuit arrangement for power semiconductor modules

A power semiconductor module and a method for producing it, wherein the module includes a substrate, with conductor tracks disposed on it to suit circuitry with which the module is used and with power semiconductor components disposed on the conductor tracks. Also disposed on the conductor tracks are spacer elements and a foil composite that includes two metal foil layers with an electrically insulating foil layer disposed between them. The foil composite has contact humps and plated-through holes. At least one of the metal foil layers is structured in a manner to suit the circuitry with which the module is used, and this foil composite is durably connected to the power semiconductor components and to the spacer elements, preferably by ultrasonic welding.

Power semiconductor module and method for producing it

A power converter circuit and associated triggering method for connecting a three-phase generator to an electrical network. The circuit includes a first direct connection of the generator to the network and a second connection of the generator to the network, through a four-quadrant converter which includes a first power converter, whose alternating voltage terminals are connected to the generator, and a second power converter, whose alternating voltage terminals are connected to the network. The triggering method for power compensation in the event of a short circuit is such that in a first period of time after the short, the second power converter outputs reactive power into the network; in a second period of time, the power converter feeds reactive power back into the network; and in a third period of time, the entire four-quadrant converter controls the gentle restarting, without loading the network with reactive power from the generator.

Power converter circuit and associated triggering method for generators with dynamically variable power output

A power semiconductor module consists of a ceramic substrate with electrically conductive contact surfaces arranged thereon in a 'circuit-friendly' manner. Components arranged on the substrate in a 'circuit-friendly' manner. A pressure contact means, consisting of a flexible pressure accumulator, and a pressure plate produce pressure for resilient bonding of power and control connections. To increase performance, reliability and service life while reducing manufacturing costs, different configuration methods for the individual components are absolutely essential. This is achieved by a flexible circuit board which connects components with each other in a circuit-friendly manner and/or with the contact surfaces of the substrate, whereby a flexible insulation material is provided to insulate components from each other.

Power semiconductor module with pressure contact means

The invention relates to a power semiconductor module, in particular a power converter module, with a base plate or for direct installation on a heat sink or other cooling body or means for cooling. The power semiconductor module includes, at least one power semiconductor component, and at least one insulating substrate on whose first surface a metallic layer is provided. A carbon-based layer (including Carbon nano-tubes) is used for at least one of a thermal and a partly electrical contacting, on at least one of the one side for contacting the power semiconductor component with the metallic layer and, (in an alternate embodiment) on the other side to connect the substrate with the heat sink or cooling body.

Power semiconductor module

A semiconductor power module has semiconductor components mounted on a substrate. The semiconductor components are in electrical contact with the substrate. Internal circuit wiring is achieved by using one or more flexible circuit boards. The flexible circuit board(s) contact the semiconductor components and also provide external connection elements. Hermetical encapsulation is achieved by lamination, and height equalization of the different circuit regions is achieved by using geometrically preformed prepregs in conjunction with the flexible circuit board and the substrate.

Multilayer semiconductor device having high packing density

A circuit assembly includes a platen for pressing carrier plates, bearing heat-dissipating components, against a heat sink. Circuits on one carrier plate are electrically connected with circuits on the other carrier plate by corresponding contacts on each carrier plate which the platen presses into mutual contact as it presses the carrier plates against the heat sink. The surfaces to which the carrier plates are pressed is stepped, which serves to align the carrier plates with respect to each other. One or more substrates, bearing other circuit elements, are attached to the platen and electrically connected to circuits on the carrier plate by resilient contact elements attached to the platen. The resilient contact elements press against contact surfaces of the carrier plates and substrates to make connections. Recesses in the platen also facilitate alignment of the carrier plates and components thereon. The interconnection of components by the resilient contact elements, and the locating effect of recesses in the heat sink and platen makes it possible to assemble and disassemble the circuit assembly rapidly and conveniently.

High density, heat-dissipating circuit assembly with accessible

The circuit arrangement comprises a mounting plate carrying at least one preferably chip-form component and contact surfaces electrically conductively connected to the component by connecting elements. The mounting plate is carried on a cooling member and is pressed thereagainst by a pressing arrangement. The pressing arrangement has a mounting element, with an elastically yielding cushion element on the side which is towards the cooling member, to press against the electrical component and/or in the vicinity thereof against the mounting plate in electrically insulated relationship therewith.

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Stein, Germany

Heinrich Heilbronner