Tokyo Electron Limited

Heiko Weichert

Joerg Bischoff

Junwei Bao

Yan Chen

Vi Vuong

Kunie Ogata

Tsuyoshi Shibata

Sebastien Egret

Kirsten Ruck

Metrology data from a semiconductor treatment system is transformed using multivariate analysis. In particular, a set of metrology data measured or simulated for one or more substrates treated using the treatment system is obtained. One or more essential variables for the obtained set of metrology data is determined using multivariate analysis. A first metrology data measured or simulated for one or more substrates treated using the treatment system is obtained. The first obtained metrology data is not one of the metrology data in the set of metrology data earlier obtained. The first metrology data is transformed into a second metrology data using the one or more of the determined essential variables.

Transforming metrology data from a semiconductor treatment system using multivariate analysis

In a pattern measuring unit installed in a coating and developing treatment system, the height of a pattern formed on a substrate is measured using the Scatterometry method. Based on the measured height of the pattern, an appropriate number of rotations of the substrate during application of a coating solution is calculated, so that the rotation of the substrate during the application is controlled by the calculated number of rotations of the substrate. Since the number of rotations of the substrate when the coating solution is applied to the substrate is controlled, it is unnecessary to stop the system which performs photolithography processing on the substrate, resulting in improved productivity of the substrate.

Substrate processing method, program, computer-readable storage medium, and substrate processing system

Embodiments of an apparatus for deriving an iso-dense bias are generally described herein. Other embodiments may be described and claimed.

Apparatus for deriving an iso-dense bias

Embodiments of controlling a fabrication process using an iso-dense bias are generally described herein. Other embodiments may be described and claimed.

Method of controlling a fabrication process using an iso-dense bias

A method of heat-treating resist coated manufacturing wafers in a processing system by establishing a temperature profile for each of a plurality of hotplates in the processing system, heat-treating the resist coated manufacturing wafers on the hotplates, obtaining CD metrology data from test areas on the heat-treated resist coated manufacturing wafers, determining CD variations for each hotplate from the CD metrology data, adjusting the temperature profile of one or more hotplates after determining the CD variations, and heat-treating additional resist coated manufacturing wafers on the hotplates after the adjusting.

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Utzberg, Germany

Heiko Weichert