Evonik Degussa Gmbh

Forschungszentrum Karlsruhe Gmbh

Heiko Thiem

Duy Vu Pham

Alexey Merkulov

Juergen Steiger

Arne Hoppe

Yvonne Damaschek

Frank-Martin Petrat

Roland Schmechel

Matthias Driess

Stefan Schutte

Jürgen Steiger

Yilmaz Aksu

Sven Hill

Koshi Okamura

The present invention relates to halogenated indium oxo alkoxides of the generic formula InO(OH)(OR)X(ROH)where R=C1-C15-alkyl, C1-C15-alkenyl, C1-C15-alkynyl, C1-C15-alkoxyalkyl, C6-C15-aryl- or C7-C15-alkoxyaryl, X&#x2550;F, Cl, Br, I and x=0 to 10, to processes for preparation thereof and to use thereof.

Indium oxoalkoxides for producing coatings containing indium oxide

The present invention relates to a liquid phase process for producing indium oxide-containing layers from nonaqueous solution, in which an anhydrous composition containing at least one indium oxo alkoxide of the generic formula MO(OR)[O(R'O)H]X[R&#x2033;OH]where x=3-25, y=1-10, z=3-50, a=0-25, b=0-20, c=0-1, d=0-25, M=In, R, R&#x2032;, R&#x2033;=organic radical, X=F, Cl, Br, I and at least one solvent are applied to a substrate, optionally dried, and converted to an indium oxide-containing layer, to the layers producible by the process according to the invention and to the use thereof.

Method for the production of layers containing indium oxide

The invention relates to a liquid-phase method for producing metal oxide-containing layers from nonaqueous solution. In said method, an anhydrous composition containing i) at least one metal oxo-alkoxide of generic formula MO(OR)[O(R'O)H]X[R&#x2033;OH], where M=In, Ga, Sn, and/or Zn, x=3-25, y=1-10, z=3-50, a=0-25, b=0-20, c=0-1, d=0-25, R, R&#x2032;, R&#x2033;=organic group, X&#x2550;F, Cl, Br, I, and ii) at least one solvent is applied to a substrate, is optionally dried, and is converted into a metal oxide-containing layer. The invention also relates to the layers that can be produced using the method of the invention and to the use thereof.

Method for the production of metal oxide-containing layers

The present invention relates to a process for producing semiconductive indium oxide layers, in which a substrate is coated with a liquid, anhydrous composition comprising a) at least one indium alkoxide and b) at least one solvent, optionally dried and thermally treated at temperatures greater than 250&#xb0; C., to the layers producible by this process, and to the use thereof.

Method for producing semiconducting indium oxide layers, indium oxide layers produced according to said method and their use

The present invention relates to a liquid indium alkoxide-containing composition comprising at least one indium alkoxide and at least three solvents L, Land L, in which the solvent Lis selected from the group consisting of ethyl lactate, anisole, tetrahydrofurfuryl alcohol, butyl acetate, ethylene glycol diacetate and ethyl benzoate, and the difference between the boiling points of the two solvents Land Lunder SATP conditions is at least 30&#xb0; C., to processes for preparation thereof and to the use thereof.

Compositions containing indium alkoxide, method for the production thereof, and use thereof

Composite of layers which comprises a dielectric layer and a layer which comprises pyrogenic zinc oxide and is bonded to the dielectric layer. Process for producing the composite of layers, in which the pyrogenic zinc oxide is applied to the dielectric layer in the form of a dispersion in which the zinc oxide particles are present with a mean aggregate diameter of less than 200 nm, and the zinc oxide layer is dried and then treated at temperatures of less than 200&#xb0; C. Process for producing the composite of layers, in which the pyrogenic zinc oxide is applied to a substrate layer or a composite of substrate layers in the form of a dispersion in which the zinc oxide particles are present with a mean aggregate diameter of less than 200 nm to form a zinc oxide layer, and then the zinc oxide layer and the substrate layer are treated at temperatures of less than 200&#xb0; C., and then a dielectric layer is applied to the zinc oxide layer. Field-effect transistor which has the composite of layers.

Pyrogenic zinc oxide-comprising composite of layers and field-effect transistor comprising this composite

The present invention relates to formulations comprising a) at least two different ZnO cubanes of which at least one ZnO cubane is present in solid form under SATP conditions and at least one ZnO cubane is present in liquid form under SATP conditions, and b) at least one solvent, to processes for producing semiconductive ZnO layers from these formulations, to the use of the formulations for producing electronic components and to the electronic components themselves.

Formulations comprising a mixture of ZnO cubanes and process using them to produce semiconductive ZnO layers

The present invention relates to a liquid phase process for producing indium oxide-containing layers, in which a coating composition preparable from a mixture comprising at least one indium oxide precursor and at least one solvent and/or dispersion medium, in the sequence of points a) to d), a) is applied to a substrate, and b) the composition applied to the substrate is irradiated with electromagnetic radiation, c) optionally dried and d) converted thermally into an indium oxide-containing layer, where the indium oxide precursor is an indium halogen alkoxide of the generic formula InX(OR)where R is an alkyl radical and/or alkoxyalkyl radical and X is F, Cl, Br or I and the irradiation is carried out with electromagnetic radiation having significant fractions of radiation in the range of 170-210 nm and of 250-258 nm, to the indium oxide-containing layers producible with the process, and the use thereof.

Process for producing indium oxide-containing layers

The present invention relates to a liquid phase process for producing indium oxide-containing layers from nonaqueous solution, in which an anhydrous composition containing at least one indium halogen alkoxide of the generic formula InX(OR)where R=alkyl radical and/or alkoxyalkyl radical and X=F, Cl, Br or I and at least one solvent or dispersion medium is, in the sequence of points a) to d), in anhydrous atmosphere, a) applied to the substrate, b) the composition applied to the substrate is irradiated with electromagnetic radiation of wavelength &#x2266;360 nm and c) optionally dried, and then d) converted thermally to an indium oxide-containing layer, to the layers producible by the process and to the use thereof.

Process for producing indium oxide-containing layers, indium oxide-containing layers produced by the process and use thereof

The present invention relates to halogenated indium oxo alkoxides of the generic formula InOX(OR)(R'CH(O)COOR&#x2033;)(HOR)(HNR&#x2032;&#x2033;)where X&#x2550;F, Cl, Br and/or I, R&#x2550;C1-C15-alkyl, C1-C15-alkenyl, C1-C15-alkynyl, C1-C15-alkoxyalkyl, C6-C15-aryl- and/or C7-C15-alkoxyaryl, R&#x2032;&#x2550;C1-C15-alkyl, C1-C15-alkenyl, C1-C15-alkynyl, C1-C15-alkoxyalkyl, C6-C15-aryl- and/or C7-C15-alkoxyaryl, R&#x2033;&#x2550;C1-C15-alkyl, C1-C15-alkenyl, C1-C15-alkynyl, C1-C15-alkoxyalkyl, C6-C15-aryl- and/or C7-C15-alkoxyaryl, R&#x2032;&#x2033;&#x2550;C1-C15-alkyl, C1-C15-alkenyl, C1-C15-alkynyl, C1-C15-alkoxyalkyl, C6-C15-aryl- and/or C7-C15-alkoxyaryl, x=0 to 10 and y=0 to 10, to processes for preparation thereof and to use thereof.

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Bensheim, Germany

Heiko Thiem