Robert Boschgmbh

Heiko Stahl

Jochen Reinmuth

Frank Fischer

Lars Tebje

Friedjof Heuck

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Jochen C Beintner

Ando Feyh

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Mirko Hattass

Reinhard Neul

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Axel Franke

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Tjalf Pirk

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Arnim Hoechst

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Bernhard Gehl

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Matthias Illing

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Ralf Schellin

Nicolaus Ulbrich

Michaela Mitschke

Nicolas Schorr

Christoph Duenn

Andreas Hartlieb

Marlene Winker

Jullian Gonska

Daniel Kaercher

Andreas Prinzen

A method for producing a bonding pad for a micromechanical sensor element. The method includes: depositing a first metal layer onto a top face of the functional layer, and depositing a second metal layer onto the first metal layer, wherein only the first layer or only the second layer is formed in a border region extending around a bonding pad region; covering a protective layer over a top face of the second metal layer in the bonding pad region and over the first or second metal layer in an inner peripheral portion of the border region, which inner peripheral portion adjoins the bonding pad region; etching the first or second layer at least in an outer peripheral portion of the border region down to the top face of the functional layer; removing the protective layer; carrying out an etching process starting from the top face of the layered structure.

Method for producing a bonding pad for a micromechanical sensor element

A method for producing a micromechanical element includes producing a micromechanical structure, the micromechanical structure having: a functional layer for a micromechanical element, a sacrifical layer at least partly surrounding the functional layer, and a closure cap on the sacrifical layer. The method further includes applying a cover layer on the micromechanical structure. The method further includes producing a grid structure in the cover layer. The method further includes producing a cavity below the grid structure, as access to the sacrifical layer. The method further includes at least partly removing the sacrifical layer. The method further includes applying a closure layer at least on the grid structure of the cover layer for the purpose of closing the access to the cavity.

Method for producing a micromechanical element

A method for manufacturing a micromechanical component having a disengaged pressure sensor device includes: configuring an electrically conductive sacrificial element in or on a first outer surface of a first substrate; applying a second substrate on or upon the outer surface of the first substrate over the sacrificial element; configuring a pressure sensor device by anodic etching of the second substrate; configuring in the second substrate at least one trench that extends to the sacrificial element; and at least partly removing the sacrificial element in order to disengage the pressure sensor device.

Method for producing a micromechanical component with an exposed pressure sensor device and micromechanical component

A polycrystalline material having low mechanical strain is provided. The polycrystalline material includes one or multiple layers of a first type and one or multiple layers of a second type. The layers of the first type and the layers of the second type each include at least one polycrystalline material component. The layers of the first type have a smaller average crystal grain size than the layers of the second type, a layer of the first type and a layer of the second type being situated, at least in part, one above the other in an alternating sequence, and it being the case for the transition between the layers of the first type and the layers of the second type to be abrupt or continuous.

Polycrystalline material having low mechanical strain; method for producing a polycrystalline material

A method for producing a via in a wafer includes providing a wafer, comprising silicon. The method includes producing a conductive region, in the form of a conductor track, preferably composed of polycrystalline silicon, in the wafer. The method includes producing a hole in the wafer such that the hole is fluidically connected to the conductive region and the sidewalls of the hole comprise silicon. The method includes applying a tungsten hexafluoride-resistant protective layer, produced from silicon oxide, in the region of the surface of the hole that is to be produced or has been produced, such that an opening of the hole is free of a protective layer. The method includes applying tungsten hexafluoride to the hole and the region of the opening of the hole by a reducing-agent-free vapor phase deposition process, preferably in the form of a CVD process, for producing the via.

Method for producing at least one via in a wafer

A method for producing a micromechanical component is provided, In a preparatory step, a substrate device of the micromechanical component and/or a cap device of the micromechanical component is patterned. In a first sub-step, a first pressure and/or a first chemical composition being adjusted, and the substrate device and the cap device being connected to each other so that a first cavern is formed, sealed from an environment of the micromechanical component, the first pressure prevailing in the first cavity and/or the first chemical composition being enclosed. In a second sub-step, a second pressure and/or a second chemical composition being adjusted, and the substrate device and the cap device being connected to each other so that a second cavity is formed, sealed from the environment of the micromechanical component and from the first cavity, the second pressure prevailing in the second cavity and/or the second chemical composition being enclosed.

Method for producing a micromechanical component

Measures for reducing parasitic capacitances in the layer structure of capacitive MEMS sensor elements, in which parasitic capacitances between bond pads for electrically contacting measuring capacitor electrodes and an electrically conductive layer lying underneath are reduced by these measures. The sensor structure having the measuring capacitor electrodes and bond pads of such MEMS components are in a layer structure on a semiconductor substrate. The carrier layer directly underneath the bond pad structure is uninterrupted in the bond pad region, and the layer structure includes at least one insulation layer by which at least one of the bond pads is electrically insulated from an electrically conductive layer lying underneath. At least one layer under the carrier layer is structured in the region of this bond pad, so that hollow spaces are situated in the layer structure underneath this bond pad, by which the parasitic capacitance between this bond pad and the conductive layer lying underneath is reduced. Alternatively/additionally, the material of the conductive layer in the region underneath this bond pad is replaced by electrically conductive material at least in the upper layer region, so that the insulation layer in the region of this bond pad is considerably thicker than outside the bond pad region.

Capacitive MEMS-sensor element having bond pads for the electrical contacting of the measuring capacitor electrodes

A method for determining a cryptographic key for a MEMS device includes identifying physical properties for the device. A feature vector having a plurality of values is determined. Each of the values correspond to different physical properties. The cryptographic key is determined from the feature vector. The cryptographic key can be determined using a fuzzy extractor. The cryptographic key can be determined using different feature vectors corresponding to different channels in a device or different MEMS structures in the device.

System and method for cryptographic key identification

Measures are provided for improving and simplifying metallic bonding processes which enable a reliable initiation of the bonding process and thus contribute to a uniform bonding. The present method provides a further option for using bonding layers. The method in the case of which the two semiconductor elements are bonded to one another via a bond of at least one metallic starting layer and at least one further starting layer provides that the two starting layers are structured in such a way that the layer areas which are assigned to one another have differently sized areal extents. Moreover, the layer thicknesses of the two starting layers should be selected in such a way that the layer areas which are assigned to one another meet the material ratio necessary for the bonding process.

Component including two semiconductor elements, which are bonded to one another via a structured bonding layer, and method for manufacturing a component of this type

For the targeted influencing of the internal pressure within a cavity between two elements of a component, a getter material or an outgassing material is situated in an additional cavity between the two elements. After the two elements are bonded to one another, the additional cavity is still to be joined via a connecting opening to the cavity. The getter material or the outgassing material is then activated so that gasses are bound in the additional cavity and in the connected cavity, or an outgassing takes place. Only when the sought internal pressure has established itself in the connected cavity is the connecting opening to the additional cavity closed. In this way, the getter material or the outgassing material is only used for establishing a defined internal pressure, but no longer has any influence on the internal pressure within the cavity during ongoing operation of the component.

Component including two semiconductor elements between which at least two hermetically tightly sealed cavities having different internal pressures are formed and method for manufacturing such a component

A micromechanical component includes a substrate and a first oxide layer on the substrate, the first oxide layer having an aperture. The component further includes a conductive functional layer, which is provided on the first oxide layer in the region of the aperture, and a metal layer, which is provided on the functional layer, for producing a bond joint. A second oxide layer is provided on lateral faces of the functional layer for insulating the functional layer.

Micromechanical component having a bond joint

A method for producing microelectromechanical structures in a substrate includes: arranging at least one metal-plated layer on a main surface of the substrate in a structure pattern; leaving substrate webs open beneath a structure pattern region by introducing first trenches into the substrate perpendicular to a surface normal of the main surface in a region surrounding the structure pattern; coating the walls of the first trenches perpendicular to the surface normal of the main surface with a passivation layer; and introducing cavity structures into the substrate at the base of the first trenches in a region beneath the structure pattern region.

Method for producing MEMS structures, and MEMS structure

A method for producing a micromechanical component is described. The method includes providing a substrate having a layer system including an insulating material situated on the substrate, a conductive layer section and a protective layer structure connected to the conductive layer section, which borders a section of the insulating material. The method furthermore includes carrying out an isotropic etching process for removing a part of the insulating material, the conductive layer section and the protective layer structure preventing the removal of the bordered section of the insulating material; and a structural element being developed, which includes the conductive layer section, the protective layer structure and the bordered section of the insulating material.

A sensor element, in particular a multichannel acceleration sensor having a substrate and a seismic mass, the sensor element having a detecting element for detecting a deflection of the seismic mass relative to the substrate, and the sensor element having an excitation element for exciting a deflection of the seismic mass perpendicular to the main extension plane.

Sensor element and method for operating a sensor element

A micromechanical acceleration sensor having a substrate, a suspension, a seismic mass, and stationary capacitive electrodes, in which the seismic mass is suspended over the substrate with the help of the suspension, the seismic mass has a mass center of gravity, the suspension has at least two anchors on the substrate, the two anchors are situated on opposite sides of the mass center of gravity, the distance between the two anchors being small compared to a horizontal extension of the seismic mass, the two anchors determine a central axis, the seismic mass have recesses which are situated on opposite sides of the central axis and are laterally open outward on the sides facing away from the central axis, and the stationary electrodes at least engage in the recesses of the seismic mass.

Micromechanical acceleration sensor having an open seismic mass

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Heiko Stahl