Infineon Technologies Ag

Infineon Technologies Dresden Gmbh

Infineon Technologies Dresden Gmbh & Co . Kg

Heiko Froehlich

Thoralf Kautzsch

Mirko Vogt

Maik Stegemann

Steffen Bieselt

Andre Roeth

Bernhard Winkler

Alessia Scire

Boris Binder

Vladislav Komenko

Andrey Kravchenko

Marco Haubold

Uwe Rudolph

Thomas Santa

Magali Glemet

Markus Burian

Olga Khvostikova

Horst Theuss

Alfons Dehe

Henning Feick

Bernhard Knott

Stefano Parascandola

Wolfram Langheinrich

Marten Oldsen

Mohsin Nawaz

Thomas Popp

Andre Röth

Bernhard Straub

Dennis Niemeier

A capacitive microelectromechanical device is provided. The capacitive microelectromechanical device includes a semiconductor substrate, a support structure, an electrode element, a spring element, and a seismic mass. The support structure, for example, a pole, suspension or a post, is fixedly connected to the semiconductor substrate, which may comprise silicon. The electrode element is fixedly connected to the support structure. Moreover, the seismic mass is connected over the spring element to the support structure so that the seismic mass is displaceable, deflectable or movable with respect to the electrode element. Moreover, the seismic mass and the electrode element form a capacitor having a capacitance which depends on a displacement between the seismic mass and the electrode element.

Capacitive microelectromechanical device and method for forming a capacitive microelectromechanical device

A light emitter device contains a heater structure configured to emit light if a predefined current flows through the heater structure. The heater structure is arranged at a heater carrier structure. The light emitter device contains an upper portion of a cavity located vertically between the heater carrier structure and a cover structure. The light emitter device contains a lower portion of the cavity located vertically between the heater carrier structure and at least a portion of a carrier substrate. The heater carrier structure contains a plurality of holes connecting the upper portion of the cavity and the lower portion of the cavity. A pressure within the cavity is less than 100 mbar.

Light emitter devices, optical filter structures and methods for forming light emitter devices and optical filter structures

A moisture sensor comprises a carrier element comprises an insulating material, a first and a second electrode structure at a distance from one another at the carrier element, a moisture-sensitive, dielectric layer element at a first main surface region of the carrier element and adjacent to the first and second electrode structures and a third electrode structure on a first main surface region of the moisture-sensitive, dielectric layer element, such that the moisture-sensitive, dielectric layer element is between the third electrode structure and the first electrode structure and between the third electrode structure and the second electrode structure. The first electrode structure is a first capacitor electrode and the second electrode structure is a second capacitor electrode of a measurement capacitor for capacitive moisture measurement, wherein the third electrode structure is a floating electrode structure.

Moisture sensor

A method of generating a germanium structure includes performing an epitaxial depositing process on an assembly of a silicon substrate and an oxide layer, wherein one or more trenches in the oxide layer expose surface portions of the silicon substrate. The epitaxial depositing process includes depositing germanium onto the assembly during a first phase, performing an etch process during a second phase following the first phase in order to remove germanium from the oxide layer, and repeating the first and second phases. A germanium crystal is grown in the trench or trenches. An optical device includes a light-incidence surface formed by a raw textured surface of a germanium structure obtained by an epitaxial depositing process without processing the surface of the germanium structure after the epitaxial process.

Method of generating a germanium structure and optical device comprising a germanium structure

In accordance with an embodiment, a method for producing a moisture sensor includes providing a substrate arrangement, applying a sensor structure, applying a first cover layer on the sensor structure, locally removing the planar cover layer arrangement to expose portions of an insulation layer, applying a third cover layer on the exposed portions of the insulation layer, exposing the planar cover layer arrangement covering the sensor structure, and applying a moisture-absorbing layer element on the planar cover layer arrangement covering the sensor structure to obtain the moisture sensor.

Method for producing a moisture sensor at the wafer level and moisture sensor

A method for manufacturing a pressure sensitive transistor includes forming a channel region between first and second contact regions in a semiconductor substrate, forming a first isolation layer on a surface of the semiconductor substrate, forming a sacrificial structure on the first isolation layer and above the channel region, forming a semiconductor layer on the sacrificial structure and on the first isolation layer, wherein the semiconductor layer covers the sacrificial structure, removing the sacrificial structure for providing a cavity between the substrate and the semiconductor layer, wherein the semiconductor layer forms a membrane structure and forms a control electrode of the pressure sensitive transistor, forming a second isolation layer on the membrane structure and on the exposed portion of the surface of the semiconductor substrate, and forming contacting structures for the first contact region, the second contact region and the membrane structure of the pressure sensitive transistor.

Method for manufacturing a pressure sensitive field effect transistor including a membrane structure

A method for manufacturing a microelectromechanical systems (MEMS) device, includes forming a cavity in a bulk semiconductor substrate; defining a movably suspended mass in the bulk semiconductor substrate by one or more trenches extending from a main surface area of the bulk semiconductor substrate to the cavity; arranging a cap structure on the main surface area of the bulk semiconductor substrate; and forming a capacitive structure. Forming the capacitive structure includes arranging a first electrode structure on the movably suspended mass; and providing a second electrode structure at the cap structure such that the first electrode structure and the second electrode structure are spaced apart in a direction perpendicular to the main surface area of the bulk semiconductor substrate.

Microelectromechanical device, method for manufacturing a microelectromechanical device, and method for manufacturing a system on chip using a CMOS process

An infrared radiation sensor comprises a substrate, a membrane formed in or at the substrate, a first counter electrode, a second counter electrode, and a composite comprising at least two layers of materials having different coefficients of thermal expansion. At least a portion of the membrane forms a deflectable electrode and the deflectable electrode is electrically floating. A first capacitance is formed between the deflectable electrode and the first counter electrode, and a second capacitance is formed between the deflectable electrode and the second counter electrode. The membrane comprises the composite or is supported at the substrate by the composite. The membrane comprises an absorption region configured to cause deformation of the composite by absorbing infrared radiation, the deformation resulting in a deflection of the deflectable electrode, which causes a change of the first and second capacitances.

Infrared radiation sensors and methods of manufacturing infrared radiation sensors

A semiconductor device may include a stress decoupling structure to at least partially decouple a first region of the semiconductor device and a second region of the semiconductor device. The stress decoupling structure may include a set of trenches that are substantially perpendicular to a main surface of the semiconductor device. The first region may include a micro-electro-mechanical (MEMS) structure. The semiconductor device may include a sealing element to at least partially seal openings of the stress decoupling structure.

Stressed decoupled micro-electro-mechanical system sensor

A microelectromechanical systems (MEMS) device is provided and includes a bulk semiconductor substrate, a cavity formed in the bulk semiconductor substrate, a movably suspended mass, a cap structure and a capacitive structure is shown. The movably suspended mass is defined in the bulk semiconductor substrate by one or more trenches extending from a main surface area of the bulk semiconductor substrate to the cavity. The cap is structure arranged on the main surface area of the bulk semiconductor substrate. The capacitive structure comprises a first electrode structure arranged on the movably suspended mass and a second electrode structure arranged at the cap structure such that the first electrode structure and the second electrode structure are spaced apart in a direction perpendicular to the main surface area of the bulk semiconductor substrate.

The present disclosure relates to an integrated semiconductor device, comprising a semiconductor substrate; a cavity formed into the semiconductor substrate; a sensor portion of the semiconductor substrate deflectably suspended in the cavity at one side of the cavity via a suspension portion of the semiconductor substrate interconnecting the semiconductor substrate and the sensor portion thereof, wherein an extension of the suspension portion along the side of the cavity is smaller than an extension of said side of the cavity.

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Radebeul, Germany

Heiko Froehlich