International Business Machines Corporation

Globalfoundries Inc.

Elpis Technologies Inc.

Heike E Riel

Walter Heinrich Riess

Heinz Schmid

Siegfried Friedrich Karg

Mikael T Bjoerk

Mattias B Borg

Kirsten Emilie Moselund

Joachim Knoch

Bernd W Gotsmann

Lukas Czornomaz

Tilman A Beierlein

Peter Mueller

Jens Hofrichter

Mirja Richter

Horst Vestweber

Fabrizio Nichele

Markus Fabian Ritter

Michael S Gordon

Komminist S Weldemariam

Bruno Michel

Veeresh Vidyadhar Deshpande

Johannes Georg Bednorz

Oliver Hayden

Emanuel Loertscher

Abdigani Mohamed Diriye

Vladimir Djara

David J Gundlach

Armin Beck

Siegfried Johannes Barth

Guy M Cohen

Paul Michael Solomon

Sarunya Bangsaruntip

Thomas E Morf

Jean Fompeyrine

Gerhard Ingmar Meijer

Jonas R Weiss

Eliav Itzhak Haskal

Hajime Nakamura

Roland Germann

Aakash Pushp

Fabian Menges

Paul F Seidler

Andreas Fuhrer Janett

Eliav Haskal

Reto R Schlittler

Samuel Clagett Strite

Volker Schmidt

Giorgio Signorello

Constance Rost-Bietsch

Gerhard J Meijer

Roland W Germann

Techniques that can facilitate high-transparency semiconductor-metal interfaces are provided. In one example, a method can comprise forming a silicon on insulator (SOI) over a wafer. The method can further comprise depositing a metal on the SOI. The method can further comprise forming a structure by dry-etching the metal and dry-etching the SOI. The method can further comprise forming a template over the structure. The method can further comprise etching a portion of the SOI for removal under the metal. The method can further comprise growing a semiconductor where the portion of SOI was removed.

High-transparency semiconductor-metal interfaces

Embodiments of the invention relate to a method for fabricating a semiconductor structure comprising a semiconductor material, and a semiconductor substrate fabricated from the method. The method can include a step of providing a template structure. The template structure can comprise an opening, a cavity and a seed structure. The seed structure can comprise a seed material and a seed surface. An inner surface of the template structure can comprise at least one metallic surface area comprising a metallic material. The embodied method further comprises a step of growing the semiconductor structure within the cavity of the template structure from the seed surface along the metallic surface area.

Fabrication of a semiconductor device

A method for manufacturing a semiconductor structure comprises the steps of: providing a substrate including a first semiconductor material; forming a dielectric layer on a surface of the substrate; forming an opening in the dielectric layer having a bottom reaching the substrate; providing a second semiconductor material in the opening and on the substrate, the second semiconductor material being en-capsulated by a further dielectric material thereby forming a filled cavity; melting the second semiconductor material in the cavity; recrystallizing the second semi-conductor material in the cavity; laterally removing the second semiconductor material at least partially for forming a lateral surface at the second semiconductor material; and forming a third semiconductor material on the lateral surface of the second semiconductor material, wherein the third semiconductor material is different from the second semiconductor material.

Method for manufacturing a semiconductor structure, semiconductor structure, and electronic device

The invention is notably directed to a method of operating a superconducting channel. The method relies on a device including: a potentially superconducting material; a gate electrode; and an electrically insulating medium. A channel is defined by the potentially superconducting material. The gate electrode positioned adjacent to the channel, such that an end surface of the gate electrode faces a portion of the channel. The electrically insulating medium is arranged in such a manner that it electrically insulates the gate electrode from the channel. Rendering the channel superconducting by cooling down the device. Next, a voltage difference is applied between the gate electrode and the channel to inject electrons in the channel through the electrically insulating medium and thereby generate a gate current between the gate electrode and the channel. The electrons are injected with an average energy sufficient to modify a critical current Iof the channel.

Operating a superconducting channel by electron injection

A volume and speech frequency level adjustment method, system, and computer program product include learning a characteristic of at least one of audio volume and speech frequency from a conversation, detecting a contextual characteristic of an ongoing conversation and an interaction of a user with a device, determining a cognitive state of the user in relation to the ongoing conversation as a function of at least one of the contextual characteristic of the volume or the speech frequency, and a user interaction pattern with a conversation device, and dynamically adjusting audio levels of the ongoing conversation for the user based on the function.

Cognitive volume and speech frequency levels adjustment

Methods are provided for fabricating semiconductor nanowires on a substrate. A nanowire template is formed on the substrate. The nanowire template defines an elongate tunnel which extends, laterally over the substrate, between an opening in the template and a seed surface. The seed surface is exposed to the tunnel and of an area up to about 2&#xd7;10nm. The semiconductor nanowire is selectively grown, via said opening, in the template from the seed surface. The area of the seed surface is preferably such that growth of the nanowire proceeds from a single nucleation point on the seed surface. There is also provided a method for fabricating a plurality of semiconductor nanowires on a substrate and a semiconductor nanowire and substrate structure.

Semiconductor nanowire fabrication

A volume and speech frequency level adjustment method, system, and computer program product include learning a preferred level and a characteristic of at least one of volume and speech frequency from a historical conference conversation, detecting a context characteristic of an ongoing conversation and an interaction of a user with a device, determining a cognitive state and a contextual situation of the user in relation to the ongoing conversation as a function of at least one of the context characteristic, a preferred level and a characteristic of the volume or the speech frequency, and the interaction, determining at least one factor to trigger an audio level modulation based on the function, and dynamically adjusting audio levels of the ongoing conversation for the user based on the at least one factor.

A device comprising a control unit and a plurality of resistive cells. The plurality of resistive cells each comprises a first terminal, a second terminal and a polymorphic layer comprising a polymorphic material. The polymorphic layer is configured to form a tunnel barrier. The polymorphic layer is arranged between the first terminal and the second terminal. The first terminal, the second terminal and the polymorphic layer form a tunnel junction.

Device comprising polymorphic resistive cells

Methods are provided for fabricating a semiconductor junction. A first semiconductor structure is selectively grown in a nanotube, which extends laterally over a substrate, from a seed extending within the nanotube. The seed is removed to expose the first semiconductor structure and create a cavity in the nanotube. A second semiconductor structure is selectively grown in the cavity from the first semiconductor structure, thereby forming a semiconductor junction between the first and second structures.

Fabrication of semiconductor junctions

A method of fabrication of an array of optoelectronic structures includes first providing a crystalline substrate having cells corresponding to individual optoelectronic structures to be obtained. Each of the cells includes an opening to the substrate. Then, several first layer portions of a first compound semiconductor material are grown in each the opening to at least partly fill a respective one of the cells and form an essentially planar film portion therein. Next, several second layer portions of a second compound semiconductor material are grown over the first layer portions that coalesce to form a coalescent film extending over the first layer portions. Finally, excess portions of materials are removed, to obtain the array of optoelectronic structures. Each optoelectronic structure comprises a stack protruding from the substrate of: a residual portion of one of the second layer portions; and a residual portion of one of the first layer portions.

Array of optoelectronic structures and fabrication thereof

A method comprises providing a cavity structure on the substrate comprising a first growth channel extending in a first direction, a second growth channel extending in a second direction, wherein the second direction is different from the first direction and the second channel is connected to the first channel at a channel junction, a first seed surface in the first channel, at least one opening for supplying precursor materials to the cavity structure, selectively growing from the first seed surface a first semiconductor structure substantially only in the first direction and in the first channel, thereby forming a second seed surface for a second semiconductor structure at the channel junction, growing in the second channel the second semiconductor structure in the second direction from the second seed surface, thereby forming the semiconductor junction comprising the first and the second semiconductor structure.

A method for producing a mono-crystalline sheet includes providing at least two aperture elements forming a gap in between; providing a molten alloy including silicon in the gap; providing a gaseous precursor medium comprising silicon in the vicinity of the molten alloy; providing a silicon nucleation crystal in the vicinity of the molten alloy; and bringing in contact said silicon nucleation crystal and the molten alloy. A device for producing a mono-crystalline sheet includes at least two aperture elements at a predetermined distance from each other, thereby forming a gap, and being adapted to be heated for holding a molten alloy including silicon by surface tension in the gap between the aperture elements; a precursor gas supply supplies a gaseous precursor medium comprising silicon in the vicinity of the molten alloy; and a positioning device for holding and moving a nucleation crystal in the vicinity of the molten alloy.

Device for producing a mono-crystalline sheet of semiconductor material from a molten alloy held between at least two aperture elements

An Apparatus and method are provided for sensing temperature of a sample. Apparatushas a sensor, positionable relative to a sample, which is responsive to temperature of a region of the sample at each position of the sensor. Sensor circuitryprovides a response signal indicative of the sensor response at the position of the sensor. Sample-temperature controllercontrols temperature of sampleindependently of sensor. Sample-temperature controllereffects a time-dependent modulation of the sample temperature such that a time-dependent heat flux is generated between the sample and the sensor at the position of the sensor. Temperature analyzerextracts time-averaged and time-dependent components of the response signal due to the modulation of the sample temperature, and processes the components to produce an output indicative of temperature of the sample at the position of the sensor.

Temperature sensing

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Rueschlikon, Switzerland

Heike E Riel