Nec Corporation

Heiji Watanabe

Nobuyuki Ikarashi

Haruhiko Ono

Toru Tatsumi

Hirohito Watanabe

Shinji Fujieda

The task of the present invention is to enable formation of a gate insulating film structure having a good-quality interface between a silicon oxide film and silicon in an interface between a high dielectric constant thin film and a silicon substrate to provide a semiconductor device and a semiconductor manufacturing method which are capable of improving interface electrical characteristics, which has been a longstanding task in practical use of a high dielectric constant insulating film. A metal layer deposition process and a heat treatment process which supply metal elements constituting a high dielectric constant film on a surface of a base silicon oxide filmallow the metal elements to be diffused into the base silicon oxide filmto thereby form an insulating film structureas a gate insulating film, after forming the base silicon oxide filmon a surface of a silicon substrate. The insulating film structureincluding a silicate region comprises a silicon oxide film region, a silicate region, and a metal rich region, forming a silicate structure having composition modulation in which composition of metal increases as closer to an upper portion, and the composition of silicon increases as closer to a lower portion.

Semiconductor device, production method and production device thereof

A semiconductor device has a substrate and a dielectric film formed directly or indirectly on the substrate. The dielectric film contains a metal silicate film, and a silicon concentration in the metal silicate film is lower in a center portion in the film thickness direction than in an upper portion and in a lower portion.

Semiconductor device with high dielectric constant insulating film and manufacturing method for the same

Semiconductor device having high-permittivity insulation film and production method therefor

The present invention provides a semiconductor device structure and an easy-to-use method for manufacturing thereof enabling to suppress wafer contamination and to form the semiconductor device superior in control and uniformity of the film thickness in the semiconductor device including plural kinds of transistors provided with a gate insulator film with different film thickness. According to the method, plural kinds of transistors with gate insulator films having different electric film thickness are formed in the steps of

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Tokyo, Japan

Heiji Watanabe