Motorola Corporation

Heidi L Denton

Gregory W Grynkewich

Henry G Hughes

Jeffrey Pearse

Vida Ilderem

DaXue Xu

Kenneth M Seddon

Thor D Osborn

A component ( ) includes a substrate ( ), a cap wafer ( ), and a protection layer ( ) formed over a surface of the cap wafer ( ). Together, the protection layer ( ) and the cap wafer ( ) form a cap structure ( ) that is bonded to the substrate ( ) via a bonding layer ( ). An opening ( ) is formed in the cap wafer ( ) by etching the cap wafer ( ). The protection layer ( ) provides protection during etching of the cap wafer ( ) for the underlying bonding layer ( ) and devices ( ) formed in the substrate ( ).

Component and method for manufacture

Portions of a semiconductor device (10,30) are formed from a dielectric layer (16,38,46) which is deposited using a plasma enhanced chemical vapor deposition (PECVD) process which adds trimethylphosphite as a dopant source during the deposition. A first embodiment forms sidewall spacers (17) adjacent to a gate structure (14) and forms doped regions (19) under the sidewall spacers (17) by annealing the dielectric layer (16) and driving phosphorus into a substrate (11). A second embodiment uses the trimethylphosphite doped film as an interlevel dielectric layer (38) which can be planarized to provide a flat surface for the formation of metal interconnect lines. A third embodiment of the present invention uses the trimethylphosphite doped film as a passivation layer (46) which is deposited in a single step process and has a phosphorus concentration to getter mobile ions.

Semiconductor device having a phosphorus doped PECVD film and a method

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Scottsdale, AZ, United States of America

Heidi L Denton