Samsung Electronics Co., Ltd.

Heetak Shin

Joon-Whan Bae

Keunsan Park

Gyeongmin Kim

Junyeong Han

Jinwoo Jung

Jooyoung Hwang

Kui-Yon Mun

Young Woo Jung

Wan-Soo Choi

Seunghyun Choi

Chunsoo Ahn

JaeSung Jung

A storage device, including: a nonvolatile memory device including a plurality of memory cells; and a controller including an internal buffer including zone buffers, and configured to: allocate a plurality of zones to a storage space, select two or more erase units to be allocated to each zone based on a zone map table, fixedly and sequentially manage logical addresses of data written in the plurality of zones, based on reads for sequential logical addresses being requested by the external host device, read first data corresponding to the sequential logical addresses from the nonvolatile memory device, and output the first data to the external host device, and based on the reads being requested, perform a prefetch operation by reading second data corresponding to next sequential logical addresses, and storing the second data in the internal buffer, without receiving a next read request from the external host device.

Prefetching data for sequential reads in nonvolatile memory device

A storage device, including: a nonvolatile memory device including a plurality of memory cells; and a controller configured to, based on receiving an open zone command from an external host device: based on a number of free erase units from among a plurality of erase units included in the plurality of memory cells being greater than a threshold value, allocate at least two free erase units to a first-type zone, and based on the number of the free erase units being smaller than or equal to the threshold value, allocate the at least two free erase units to a second-type zone. wherein the controller is further configured to permit a random write based on a random logical address received from the external host device for the first-type zone, and to permit a zone write based on a sequential logical address received from the external host device for the second-type zone.

Storage device including nonvolatile memory device and operating method of storage device

A storage device, including a nonvolatile memory device comprising a plurality of memory cells; and a controller configured to: allocate a plurality of zones to a storage space of the nonvolatile memory device based on a request received from an external host device, fixedly and sequentially manage logical addresses of data written in the plurality of zones, generate a first page map table corresponding to a first zone based on performing the write operation on the first zone, the first page map table comprising a logical address and a physical address of the first zone, based on the first zone being full, activate a read service, which is based on the zone map table, and based on the read service being activated, process read requests for the first zone from the external host device using the zone map table.

A storage device is provided which includes a plurality of memory chips each nonvolatile memory cells divided into a first memory region and a second memory region; and a memory controller configured to buffer data provided from the exterior and to control the plurality of memory chips to perform a buffer-program operation and a main-program operation. The buffered data is stored at the first memory region at the buffer-program operation and data stored at the first memory region is written at the second memory region at the main-program operation. During a main-program operation of a first memory chip among the plurality of memory chips, the memory controller buffers data to be written at a second memory chip.

Data storage device comprising nonvolatile memory chips and control method thereof

A data management method includes determining the size of input data, storing the input data in a log block if the size of the input data is determined to be a write unit, and storing the input data in a partial block if the size of the input data is determined to be smaller than the write unit. The log block is a temporary block storing data of same addresses and the partial block is a temporary block storing data regardless of their addresses. The memory system includes a nonvolatile memory and a memory controller configured to control the nonvolatile memory. The memory controller is configured to temporarily store input data smaller than a write unit in a selected memory block even when the input data have different addresses.

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Hwaseong-si, South Korea

Heetak Shin