Samsung Electronics Co., Ltd.

Heetai Oh

Sanghyun Choi

Jinyoung Kim

Sehwan Park

Heewon Lee

Youngdeok Seo

Kangho Roh

Ilhan Park

Woohyun Kang

Silwan Chang

A memory device may determine cell count information from a threshold voltage distribution of memory cells and may determine a detection case based on cell count information when correction of an error in read data, received from the memory device performing a read operation, fails. The memory controller may control the memory device to perform a read operation using a development time determined in consideration of an offset voltage of a read voltage corresponding to the detection case. When correction of the error in the read data fails again, the memory controller may control the memory device to perform a read operation using a corrected read voltage generated using a dynamic offset voltage obtained by inputting the cell count information to a machine learning model.

Memory controller, memory device, and storage device

Growing community of inventors

Seoul, South Korea

Heetai Oh