Samsung Electronics Co., Ltd.

Heesung Shim

Jaekyu Lee

Sangyoon Kim

Seungsik Kim

Seunghyun Lim

Joosung Moon

Sungjae Jun

An image sensor is disclosed. The image sensor includes a plurality of pixels arranged in a plurality of rows and a plurality of columns, each of the pixels including: a photodiode; a floating diffusion node configured to accumulate photocharges generated from the photodiode; a first capacitor configured to store charges according to a voltage of the floating diffusion node which is reset; a second capacitor configured to store charges according to a voltage of the floating diffusion node in which the photocharges are accumulated; a first sampling transistor connected to a first output node and configured to sample charges to the first capacitor; a second sampling transistor connected to the first output node and configured to sample charges to the second capacitor; and at least one precharge select transistor connected to the first output node and configured to reset the first output node.

Image sensor

An image sensor comprising a pixel array in which a plurality of pixels are arranged and a row driver. Each of the pixel includes a photodiode, a transfer transistor for transferring photocharges of the photodiode to a floating diffusion node (FD), a conversion gain control transistor, a first source follower for amplifying and outputting the voltage of the FD to a first node, a precharge selection transistor connected between the first node and a second node, a first capacitor, a first sampling transistor connected between the second node and the first capacitor, a second capacitor, a second sampling transistor connected between the second node and the second capacitor, a second source follower for amplifying a voltage of the second node, a first selection transistor connected between the second source follower and a column line, and a second selection transistor connected between the first node and the column line.

Image sensor comprising pixels usable in both rolling shutter and global shutter mode and image processing device including the same

An image sensor is provided. The image sensor includes a pixel array in which a plurality of pixels are arranged, wherein each of the plurality of pixels includes a photodiode; a floating diffusion node configured to integrate photocharges generated in the photodiode; a first sampling transistor electrically connected to a first node; a first capacitor electrically connected to a first node and configured to store a charge corresponding to a voltage of the floating diffusion node which is reset; a second sampling transistor electrically connected to a second node; a second capacitor electrically connected to the second node and configured to store a charge corresponding to a voltage of the floating diffusion node in which the photocharges are integrated; and at least one mode transistor configured to adjust an equivalent capacitance of each of the first node and the second node according to a mode control signal.

An image sensor pixel includes a substrate, a photodiode and a pixel circuit in the substrate. The pixel circuit includes a transfer element, which is electrically connected between the photodiode and a floating diffusion node that accumulates electrical charges generated by the photodiode in response to light incident the substrate, and a driving element, which is electrically connected to the floating diffusion node. An output circuit is also provided, which is electrically connected between a column line and the pixel circuit. The output circuit includes a switching element electrically connected to an output terminal of the driving element, a primary capacitor electrically connected to the switching element, a secondary capacitor, which is selectively connected to or disconnected from the switching element based on an on/off switching state of a first enable element, and a first selection element electrically connected between the switching element and the column line.

Growing community of inventors

Seoul, South Korea

Heesung Shim