Lg Display Co., Ltd.

HeeSung Lee

Seoyeon Im

SeungJin Kim

MinCheol Kim

JeeHo Park

SungKi Kim

Sohyung Lee

JeongSuk Yang

Kwon-Shik Park

Disclosed are a thin film transistor (TFT) including an oxide semiconductor layer capable of being applied to high-resolution flat panel display devices requiring high-speed driving, a gate driver including the TFT, and a display device including the gate driver. The TFT includes first oxide semiconductor layer consisting of indium-gallium-zinc-tin oxide (IGZTO) and a second oxide semiconductor layer including indium-gallium-zinc oxide (IGZO). A content ratio (Ga/In) of gallium (Ga) to indium (In) of the second oxide semiconductor layer is higher than a content (Ga/In) of Ga to In of the first oxide semiconductor layer, and a content ratio (Zn/In) of zinc (Zn) to In of the second oxide semiconductor layer is higher than a content (Zn/In) of Zn to In of the first oxide semiconductor layer.

Method for manufacturing thin film transistor, and electronic device

A thin-film transistor is disclosed. The thin-film transistor includes a gate electrode disposed on a substrate, an oxide semiconductor layer disposed so as to overlap at least a portion of the gate electrode in the state of being isolated from the gate electrode, a gate insulation film disposed between the gate electrode and the oxide semiconductor layer, a source electrode connected to the oxide semiconductor layer, and a drain electrode connected to the oxide semiconductor layer in the state of being spaced apart from the source electrode, wherein the oxide semiconductor layer includes indium (In), gallium (Ga), zinc (Zn), tin (Sn), and oxygen (O), the content of indium (In) in the oxide semiconductor layer is greater than the content of gallium (Ga), the content of indium (In) is substantially equal to the content of zinc (Zn), and the content ratio (Sn/In) of tin (Sn) to indium (In) is 0.1 to 0.25.

Thin-film transistor including oxide semiconductor layer, method of manufacturing the same, and display apparatus including the same

Thin film transistor, gate driver including the same, and display device including the gate driver

A thin-film transistor is disclosed. The thin-film transistor includes an oxide semiconductor layer disposed on a substrate, a gate electrode disposed so as to overlap at least a portion of the oxide semiconductor layer and isolated from the oxide semiconductor layer, a source electrode connected to the oxide semiconductor layer, and a drain electrode connected to the oxide semiconductor layer and spaced apart from the source electrode, wherein the oxide semiconductor layer includes a first sub layer disposed on the substrate, a second sub layer disposed on the first sub layer, and a third sub layer disposed on the second sub layer, the second sub layer has larger resistance than the first sub layer and the third sub layer and lower carrier concentration than the first sub layer and the third sub layer, the first sub layer has higher hydrogen concentration than the second sub layer and the third sub layer, and each of the first sub layer and the second sub layer has crystallinity.

Thin-film transistor having hydrogen-blocking layer and display apparatus including the same

The present disclosure relates to a thin-film transistor including two-dimensional semiconductor and display apparatus including the same. The thin-film transistor includes a gate electrode disposed on a substrate, a semiconductor layer disposed so as to overlap at least a portion of the gate electrode in the state of being isolated from the gate electrode, a gate insulation film disposed between the gate electrode and the semiconductor layer, a source electrode connected to the semiconductor layer, and a drain electrode connected to the semiconductor layer in the state of being spaced apart from the source electrode, wherein the semiconductor layer includes a first layer including an oxide semiconductor and a second layer disposed so as to overlap the first layer in a plane view, the second layer comprising a two-dimensional semiconductor, and an energy band gap of the first layer is larger than an energy band gap of the second layer.

Growing community of inventors

Incheon, South Korea

HeeSung Lee