Samsung Electronics Co., Ltd.

Lg Electronics Inc.

Heesoo Kang

Soohun Hong

Donghyun Kim

Heedon Jeong

Sanghyuk Hong

Jae Yup Chung

Eunkyung Kim

Sung-Dae Suk

Sungil Park

Taeyun Kim

Jeonghoon Kang

Suyeon Kim

Changwoo Oh

Dongho Cha

Kang Soo Lee

Taejoo Kim

Doochan Cho

Hyangseok Chae

Kwonseung Yang

A semiconductor device includes a fin region with long and short sides, a first field insulating layer including a top surface lower than that of the fin region and adjacent to a side surface of the short side of the fin region, a second field insulating layer including a top surface lower than that of the fin region and adjacent to a side surface of the long side of the fin region, an etch barrier pattern on the first field insulating layer, a first gate on the fin region and the second field insulating layer to face a top surface of the fin region and side surfaces of the long sides of the fin region. A second gate is on the etch barrier pattern overlapping the first field insulating layer. A source/drain region is between the first gate and the second gate, in contact with the etch barrier pattern.

Semiconductor device including a three-dimensional channel

A mobile terminal and a method for controlling the same are disclosed. The mobile terminal includes a display and a controller configured to display at least one piece of video content on the display, to extract at least one text from at least one of an image and sound included in at least a portion of the video content and to display the at least one text on at least one specific position of the display, wherein the at least one specific position is related to at least one point of the video content, from which the at least one text is extracted. According to the present invention, video content can be manipulated more conveniently by displaying images and sound included in the video content as text.

Multimedia segment analysis in a mobile terminal and control method thereof

Semiconductor device

The present invention relates to a mobile terminal and a method for controlling the same which can effectively reduce an afterimage phenomenon generated on a display unit. A control apparatus of a mobile terminal for reducing an afterimage of a display unit of the mobile terminal according to embodiments of the present invention may comprise: the display unit for displaying items in a turned-on state; and a control unit for turning off the display unit after displaying the items on the display unit, moving display locations of the items displayed on the display unit in the turned-on state in a state where the display unit is turned off, and displaying the items in the moved display locations when the display unit is turned back on.

Apparatus and method for reducing image sticking in a mobile terminal

Method of fabricating semiconductor device including an etch barrier pattern

Field effect transistors are provided. An active region protrudes from a substrate and a gate electrode is provided on the active region. Source/drain regions are provided at both sides of the active region under the gate electrode, respectively. A width of a lower portion of the gate electrode is greater than a width of an upper portion of the gate electrode.

Field effect transistor

Provided is a semiconductor device, which includes a gate electrode crossing over a semiconductor fin disposed on a substrate, a gate dielectric layer disposed between the gate electrode and the semiconductor fin, a channel region having a three dimensional structure defined in the semiconductor fin under the gate electrode, impurity regions disposed in the semiconductor fin at both sides of the gate electrode and spaced apart from the gate electrode, a first interlayer dielectric layer covering an entire surface of the substrate, except for the gate electrode, first contact plugs passing through the first interlayer dielectric layer and contacting the impurity regions, and a second interlayer dielectric layer covering the gate electrode and partially filling a space between the gate electrode and the impurity regions to define an air gap between the gate electrode and the impurity regions.

Semiconductor devices and methods of fabricating the same

Semiconductor device and fabricating method thereof

Growing community of inventors

Seoul, South Korea

Heesoo Kang