Samsung Electronics Co., Ltd.

Heegeun Jeong

Seungjoo Nah

Jinyoung Kim

Youngwoo Chung

Jinju Jeon

Hoemin Jeong

Sanghoon Kim

Min Hee Jang

Jeong-Ho Lee

Wonchul Choi

Yitae Kim

Euiyeol Kim

Chungho Song

Kyeongjae Byeon

Hyounmin Baek

Wonmo Chun

Kyungho Lee

Sang-Hoon Kim

Hanseok Kim

JungChak Ahn

Sun-Hyun Kim

Junho Yoon

Minho Jang

Jongeun Park

Sangjun Choi

Sunwoo Park

Dongmin Han

Sunyoung Bang

Taekhwan Hyun

Wonhyeok Kim

Seongjoo Nah

Mihye Jang

An image sensor includes: a first semiconductor chip having a pixel region, a peripheral region, and a first wiring layer; and a second semiconductor chip combined with the first semiconductor chip, and including a second wiring layer, wherein the pixel region includes an active pixel region and a dummy pixel region, wherein the pixels are separated from one another by deep trench isolations (DTI) passing through a silicon layer, wherein a backside contact applying a negative (−) voltage to a conductive layer of each of the DTIs is arranged in the dummy pixel region and passes through the silicon layer, wherein the backside contact contacts the conductive layer of each of the DTIs, and wherein a through via is formed in the peripheral region, and wiring lines of the first wiring layer are connected to wiring lines of a second wiring layer through the through via.

Image sensor with stack structure in which two semiconductor chips are combined with each other

An image sensor includes: a pixel array including a plurality of photodiodes arranged on an upper surface of a substrate, pixel isolation layers extending from the upper surface to a lower surface of the substrate and disposed between the plurality of photodiodes, and pixel circuits. The pixel array includes pixel groups respectively including two or more of the photodiodes, at least one color filter, and at least one microlens. The at least one color filter included in each of the pixel groups has one color, and the pixel isolation layers includes a first pixel isolation layer disposed between the pixel groups and containing silicon oxide and polysilicon; and a second pixel isolation layer containing silicon oxide and extending in a first direction and a second direction, which intersect each other between the two or more photodiodes in each of the pixel groups.

Image sensor

An image sensor may include a substrate including first and second surfaces opposite to each other and including a single crystalline layer, a first epitaxial layer, and a second epitaxial layer sequentially stacked from the second surface. The single crystalline layer and the second epitaxial layer may be doped with first impurities of a first conductivity type. The first epitaxial layer may be doped with second impurities of a second conductivity type. A pixel separation structure extends from the first surface to penetrate at least the second and first epitaxial layers and divides the substrate into a plurality of pixels. A transfer gate electrode extends from the first surface to penetrate the second epitaxial layer. A doping concentration of the first impurities doped in the single crystalline layer may be higher than that in the second epitaxial layer.

An image sensor includes; a substrate having a first surface and an opposing second surface and including unit pixels respectively having photoelectric conversion regions, a semiconductor pattern disposed in a first trench defining the unit pixels, the semiconductor pattern including a first semiconductor layer provided on an inner surface of the first trench and a second semiconductor layer provided on the first semiconductor layer, and a first contact provided on the second surface and connected to the semiconductor pattern. A height of the first semiconductor layer from a bottom surface of the first trench is less than a height of the second semiconductor layer from the bottom surface of the first trench.

Image sensor and method of fabricating same

An image sensor includes first through fourth pixels. The first pixel includes a first color filter, a first photoelectric conversion device (PD), and a first microlens. The second pixel includes a second PD and a first filling portion. The third pixel includes a third PD and a second filling portion. The fourth pixel includes a fourth PD, a second microlens, and a second color filter different from the first color filter. The second pixel is adjacent to the first pixel. The third pixel is adjacent to the second pixel. The second and third pixels do not comprise any one of a red, blue, and green color filter. Each of the first and second filling portions is configured to transmit light of wavelengths corresponding to blue, red, and green to the second and third PDs, respectively. The first color filter is configured to transmit light of the wavelength corresponding to blue.

Image sensor and manufacturing process thereof

An image sensor includes a dual vertical gate. The dual vertical gate includes two vertical extension portions that are spaced apart from each other in a first direction and vertically extend in a second direction perpendicular to the first direction into a substrate, and a connection portion that connects the two vertical extension portions to each other. An element isolation layer is disposed adjacent to a side surface of the vertical extension portion in the first direction. The two vertical extension portions are separated by a separation area that extends in the second direction, and a top surface of the separation area is lower than a top surface of the element isolation layer.

Dual vertical gate and image sensor including the same

An image sensor includes a substrate including a first region and a second region surrounding the first region, a light sensing element in the substrate, a planarization layer on the light sensing element, a color filter array layer including color filters on the planarization layer on the first region of the substrate, a light blocking metal pattern on the planarization layer on the second region of the substrate, a dummy color filter layer on the light blocking metal pattern on a portion of the second region adjacent to the first region of the substrate, and microlens on the color filter array layer. Active pixels are in the first region, and optical black (OB) pixels are in the second region.

Image sensor and method of manufacturing the same

An image sensor including: a semiconductor substrate having a first surface and a second surface; a pixel device isolation film extending from the first surface of the semiconductor substrate into the semiconductor substrate, wherein the pixel device isolation film defines pixels in the semiconductor substrate, and includes a conductive layer; and a device isolation structure located inside a device isolation trench that extends from the first surface of the semiconductor substrate into the semiconductor substrate, wherein the device isolation structure includes a conductive liner electrically connected to the conductive layer, wherein a negative bias is applied to the conductive layer and the conductive liner.

Image sensors including a photodiode

An image sensor includes: a substrate including a plurality of first and second pixels; a light blocking pattern providing a plurality of first spaces respectively disposed on the first pixels and at least one second space disposed on the plurality of second pixels; a plurality of color filters respectively disposed in the plurality of first spaces; and a microlens layer including a plurality of first microlenses respectively disposed on the plurality of color filters, at least one filling portion disposed in the at least one second space, and at least one second microlens disposed on the at least one filling portion, wherein the microlenses are disposed at the same height as each other, and wherein the at least one filling portion and the at least one second microlens comprise an integrated structure without an interface between the at least one filling portion and the at least one second microlens.

An image sensor includes a first structure including a first substrate, and a first internal wiring structure on the first substrate. The first substrate includes an active pixel region and a through electrode region around the active pixel region. The first internal wiring structure includes a plurality of first internal wiring patterns. The image sensor further includes a second structure including a second substrate and a second internal wiring structure on the second substrate. The second substrate is arranged on the first substrate. The image sensor additionally includes a through electrode layer arranged in the through electrode region to at least partially fill a through electrode trench, which penetrates the first substrate, and to connect the first internal wiring structure to the second internal wiring structure.

Image sensor including a back via stack

An image sensor includes: a substrate having a first surface and a second surface that are opposite to each other; a plurality of color filters on the substrate; a fence pattern between adjacent color filters of the plurality of color filters; and a protective layer between the substrate and the plurality of color filters, wherein the protective layer covers the fence pattern. The fence pattern includes: a first fence pattern having a first bottom surface and a first top surface that are opposite to each other; and a second fence pattern on the first top surface of the first fence pattern. A width at the first bottom surface of the first fence pattern is less than a width of the second fence pattern, and the protective layer covers a sidewall of the first fence pattern.

Image sensor including a fence pattern

An image sensor includes a semiconductor substrate having first and second surfaces facing each other and a first device isolation layer provided in the semiconductor substrate. The first device isolation layer defines pixel regions of the semiconductor substrate and includes first and second portions crossing each other. The first and second portions are provided to surround one of the pixel regions, and the first portion is provided to extend from the first surface of the semiconductor substrate toward the second surface and to have a structure inclined relative to the first surface.

A semiconductor device includes a pad disposed on a semiconductor layer, an insulating layer disposed between the semiconductor layer and the pad, a through-via penetrating the semiconductor layer and the insulating layer so as to be connected to the pad, and an isolation layer penetrating the semiconductor layer and surrounding the pad when viewed from a plan view.

Growing community of inventors

Suwon-si, South Korea

Heegeun Jeong