Samsung Electronics Co., Ltd.

Heebom Kim

Hoon Tae Kim

Donggun Lee

Minho Kim

Sangjin Kim

Changyoung Jeong

Jinseok Heo

Yongseok Jung

Sungwon Kwon

Jongkeun Oh

Yongseung Moon

Sungmin Huh

Yigwon Kim

Heeyoung Go

Hong-Seock Choi

Mankyu Kang

Chanuk Jeon

A reticle for an apparatus for EUV exposure and a method of manufacturing a reticle, the reticle including a substrate including an edge region and a main region; a multi-layer structure on the main region and the edge region, a sidewall of the multi-layer structure overlying the edge region; a capping layer covering an upper surface and the sidewall of the multi-layer structure and at least a portion of the edge region of the substrate; and an absorber layer on the capping layer, the absorber layer covering an entire upper surface of the capping layer on the edge region of the substrate, wherein a stacked structure of the capping layer and the absorber layer is on an upper surface of the edge region of the substrate, and a sidewall of the stacked structure of the capping layer and the absorber layer is perpendicular to an upper surface of the substrate.

Reticle in an apparatus for extreme ultraviolet exposure

Disclosed are photomasks, methods of fabricating the same, and methods of manufacturing semiconductor devices using the same. The photomask comprises a substrate including a pattern region and a peripheral region around the pattern region, a reflection layer on the pattern region and extending onto the peripheral region, an absorption structure on the reflection layer, and a dielectric pattern on the absorption structure on the peripheral region and exposing the absorption structure on the pattern region.

Photomask, method of fabricating the same, and method of manufacturing semiconductor device using the same

Provided is a pellicle to be used in a photolithography process. The pellicle a film, at least a portion of which includes carbon allotropes. The film has a first surface and a second surface facing the first surface, the film comprises a doped region including dopants, the doped region adjacent to the first surface, the dopants include least one of boron or nitrogen, and the doped region comprises a bond between an atom of at least one of the dopants and a carbon atom.

Pellicle and reticle including the same

A method of adjusting a critical dimension of a reticle patterns in a reticle used to fabricate semiconductor devices can include determining respective values for a critical dimension of a plurality of reticle patterns in an image of the reticle and providing an atmospheric plasma to a first reticle pattern included in the plurality of reticle patterns, the first reticle pattern having a first value for the critical dimension that is different than a target value for the critical dimension. The atmospheric plasma may not be provided to second reticle patterns included in the plurality of reticle patterns, the second reticle patterns having a second value for the critical dimension that is about equal to the target value.

Methods, systems and computer program products configured to adjust a critical dimension of reticle patterns used to fabricate semiconductor devices

A photomask according to the invention provides selective regional optimization of illumination type according to the type of image being formed using the photomask. The photomask include a light polarizing structure which polarizes the light incident on the polarizing structure. Light of a first illumination type from a source in a photolithographic exposure system is incident on the photomask. A portion of the light is incident on the region of the photomask that includes the polarizing structure, and another portion of the light is incident on another region of the photomask that does not include a polarizing structure. The illumination type of the light incident on the polarizing structure is changed to a second illumination type such that light incident on a substrate such as an integrated circuit wafer from the region of the photomask that has the polarizing structure is of the second illumination type. The illumination type of the portion of the light that is not incident on the polarizing structure is not changed, such that light from that portion of the photomask incident on another region of the wafer is of the first illumination type. By selectively regionally controlling illumination type in the photolithography process, resolution of the exposure system is optimized in all regions of the wafer.

Photomask, method of making a photomask and photolithography method and system using the same

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Hwaseong-si, South Korea

Heebom Kim