Samsung Electronics Co., Ltd.

Hee-Woo Park

Yoon-Dong Park

Yong-Jei Lee

Seoung-hyun Kim

Joo-yeong Gong

Seung-Won Cha

Sung-Chul Kim

Young-Gu Jin

Ju-Hwan Jung

Jung-Hyung Pyo

Hiroshige Goto

A depth pixel of a three-dimensional image sensor includes a first photo gate which is turned on/off in response to a first photo control signal, a first photo detection area configured to generate first charges based on a received light reflected from a subject when the first photo gate is turned on, a first transmission gate which is turned on/off in response to a first transmission control signal, a first floating diffusion area configured to accumulate the first charges generated from the first photo detection area when the first transmission gate is turned on, and a first compensation unit configured to generate second charges which are different from the first charges based on ambient light components included in the received light to supply the second charges to the first floating diffusion area.

Depth pixel included in three-dimensional image sensor, three-dimensional image sensor including the same and method of operating depth pixel included in three-dimensional image sensor

A unit pixel includes a sensing transistor, a photo diode, and a reset drain region. The sensing transistor includes a reference active region, an output active region, and a gate. The gate is between the reference active region and the output active region to electrically connect the reference active region to the output active region based on a gate voltage. The reference active region and output active region are within a semiconductor substrate. The photo diode is under the gate within the semiconductor substrate. The reset drain region is within the semiconductor substrate and is electrically connected to the photo diode by the gate based on the gate voltage.

Unit pixel with photodiode under gate of sensing transistor and image pixel array including the same

A depth pixel of an image sensor includes a depth sensing element configured to generate first charges that are photo-electrically converted from a light reflected from an object, a first floating diffusion node configured to receive the first charges from the depth sensing element, a second floating diffusion node configured to output second charges corresponding to a component of a reflection light where a component of an ambient light is cancelled, and an ambient light cancellation circuit configured to detect the ambient light to control a barrier level of a charge transfer path between the first floating diffusion node and the second floating diffusion node in response to the ambient light.

Depth pixel and image pick-up apparatus including the same

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Seoul, South Korea

Hee-Woo Park