Samsung Electronics Co., Ltd.

Electronics and Telecommunications Research Institute

Industry-University Cooperation Foundation Hanyang University

Hee-woo An

Jong-Joo Lee

Chang Sun Kim

Seong Hoon Choi

Tae-Yeoul Yun

Yun-mo Kang

Yea Chul Roh

A semiconductor memory package is provided. The package includes a base substrate, and chip connection pads and external connection pads respectively arranged on upper and lower surfaces of the base substrate; and two semiconductor memory chips mounted on the base substrate each having chip pads electrically connected to the chip connection pads. A first electrical path extends from an external connection pad to a first chip pad of one of the chips and a second electrical path extends from the external connection pad to a second chip pad of another chip, the first and second electrical paths have a common line, and the first electrical path has a first branch line and the second electrical path has a second branch line. The base substrate includes an open stub extending from the common line and having an end which is open without being connected to another electrical path.

Semiconductor memory package

Provided is a frequency conversion mixer. The frequency conversion mixer includes a transconductance stage, a switching stage, a load stage, a current bleeding circuit, and a bias stage. The transconductance stage receives an RF signal, and outputs a current corresponding to a voltage of the RF signal. The switching stage switches the current which is outputted from the transconductance stage in response to a local oscillation signal, for frequency conversion the RF signal into an intermediate frequency (IF) signal. The load stage is connected between the switching stage and a supply voltage terminal. The current bleeding circuit is connected parallel with the switching stage, especially, embodying inverter structure with transconductance stage to get not only current bleeding effect but also current reuse effect, and one resonant inductor for reducing noise which is generated in parasitic capacitance at node between transconductance stage and switching stage. The bias stage is connected between the transconductance stage and a ground terminal, and has the switched biasing technique for allowing not only the stable bias current but also lowering the flicker noise.

Frequency conversion mixer

Growing community of inventors

Seoul, South Korea

Hee-woo An