Hongik University Industry-academia Cooperation Foundation

Samsung Display Co., Ltd.

Hee-Sun Yang

Chang-Ho Lee

Hee-Joo Ko

Ki-Heon Lee

Jeong-Hoon Lee

Jong-Hoon Kim

Jung-Ho Jo

Chang-Yeol Han

Bu-Yong Kim

Eun-Pyo Jang

The metal oxide nanoparticle includes a Zn-containing metal Meoxide nanoparticle of ZnMeO (0≤x≤0.5) composition, and a metal Meion surface treatment layer formed on a surface of the nanoparticle. Here, the metal Meis any one selected from Li, Be, Na, Mg, Al, K, Ca, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Ga, Ge, Rb, Sr, Zr, Nb, Mo, Ru, Rh, Pd, Ag, In, Sn, Sb, Ba and a combination thereof, and the metal Meis any one selected from Li, Be, Na, Mg, Al, K, Ca, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, Rb, Sr, Zr, Nb, Mo, Ru, Rh, Pd, Ag, In, Sn, Sb, Ba and a combination thereof.

Metal oxide nanoparticles surface-treated with metal ion, quantum dot-light-emitting device comprising the same and method for fabricating the same

A method for fabricating quantum dots according to the present disclosure includes (a) synthesizing InP cores based on an aminophosphine type phosphorus (P) precursor, (b) size-sorting the InP cores, and (c) forming at least two shells on the size-sorted InP cores. In this instance, the size-sorting includes precipitating the InP cores with an addition of a dispersive solvent and a nondispersive solvent to the InP cores and separating the InP cores using a centrifugal separator, wherein the InP cores are separated in a descending order by size by performing iteration with a gradual increase in an amount of the nondispersive solvent.

Fabrication method of InP based quantum dot by using aminophosphine type P precursor and core size-sorting procedure

The present disclosure provides II-VI based non-Cd visible light emitting quantum dots (QDs) and a manufacturing method thereof to solve the problems with broad full width at half maximum (FWHM) and low quantum efficiency. The present disclosure further provides a QD light emitting diode (QLED) using the II-VI based non-Cd visible light emitting QDs. The QDs according to the present disclosure include a II-VI based ternary ZnSeTe core, wherein a Se:Te ratio in the ZnSeTe core is 1:10 to 100:1. According to the present disclosure, it is possible to provide QDs that emit visible light ranging from red to blue by adjusting the Se:Te ratio in the II-VI based ternary ZnSeTe core.

II-VI based non-Cd quantum dots, manufacturing method thereof and QLED using the same

Disclosed is an optoelectronic device including a lanthanum-based active layer and a method for fabricating the same. The optoelectronic device includes an active layer of multiple quantum well (MQW) structure including each well between walls, wherein the wall is a dielectric layer selected from alkali metal halide, alkali earth metal halide, alkali metal chalcogenide and alkali earth metal chalcogenide, and the well is a layer including semiconductor selected from lanthanum-based metal halide, lanthanum-based metal chalcogenide, transition metal (including post transition metal) halide and transition metal chalcogenide. The optoelectronic device including the active layer can be used in applications of LEDs, displays, optical sensors and solar cells. When the active layer is used as a photoconversion layer, displays can be implemented by upconversion or downconversion of short wavelength of UV, blue and IR light source to visible wavelength of red, green and blue.

Optoelectronic device and method for fabricating the same

There are provided green-emitting quantum dots (QDs) including I-III-VI type ternary Cu&#x2014;Ga&#x2014;S core QDs and ZnS multishell wherein Cu:Ga is 1:10 to 1:1, and a fabricating method thereof. Integration of these QDs and red-emitting QDs into a blue LED leads to the fabrication of a white light-emitting device with high color rendering index. There are also provided blue-emitting QDs including I-III-VI type quaternary Zn&#x2014;Cu&#x2014;Ga&#x2014;S or Cu&#x2014;Ga&#x2014;Al&#x2014;S core QDs and ZnS multishell, and a fabricating method thereof. An electrically-driven blue light-emitting device with a QD emitting layer including these QDs interposed between a hole transport layer and an electron transport layer is fabricated.

I-III-VI type quantum dots, light-emitting device using the same and fabricating methods thereof

In a method of manufacturing a quantum dot, a core may be formed using (utilizing) at least one cation precursor and at least one anion precursor. The core may be reacted with a shell forming precursor and a ligand forming precursor for more than one hour to form a shell enclosing the core and a ligand. A nanoparticle including the core, the shell and the ligand may be washed.

Growing community of inventors

Seoul, South Korea

Hee-Sun Yang