Seoul Viosys Co., Ltd.

Hee Sub Lee

Jong Hyeon Chae

Jong Min Jang

Daewoong Suh

Hyun A Kim

Won Young Roh

Joon Sup Lee

Chae Hon Kim

Seung Kyu Choi

Seon Min Bae

Su Youn Hong

Soon Ho Ahn

A light emitting device includes a substrate including gallium nitride, and a semiconductor layer disposed on the substrate, the semiconductor layer including an n-type nitride semiconductor layer, an active layer disposed on the n-type nitride semiconductor layer, and a p-type nitride semiconductor layer disposed on the active layer, in which an angle defined between a crystal growth plane of the substrate and an m-plane thereof is in a range of 3.5&#xb0; to 6.

Light emitting device with high efficiency

A template for growing a semiconductor, a method of separating a growth substrate and a method of fabricating a light emitting device using the same are disclosed. The template for growing a semiconductor includes a growth substrate including a nitride substrate; a seed layer disposed on the growth substrate and including at least one trench; and a growth stop layer disposed on a bottom surface of the trench, wherein the trench includes an upper trench and a lower trench, and the upper trench has a smaller width than the lower trench.

Method of fabricating light emitting device through forming a template for growing semiconductor and separating growth substrate

Growing community of inventors

Ansan-si, South Korea

Hee Sub Lee