Samsung Electronics Co., Ltd.

Hee-sook Cheon

Ki-Vin Im

Jun-Seok Lee

In-seak Hwang

Byoung-ho Kwon

Jin-Woo Bae

Hye-sung Park

Jong-hyuk Park

A method of fabricating a semiconductor device includes providing a substrate having a cell region and a peripheral circuit region. A plurality of bit line structures are formed on the substrate in the cell region, and a gate structure having the same structure as each of the bit line structures is formed on the substrate in the peripheral circuit region. A spacer is formed on sidewalls of the bit line structures and the gate structure. The bit line structures extend in a first direction and are spaced apart from each other in a second direction that is perpendicular to the first direction by first grooves that extend in the first direction. A sacrificial layer is formed to fill the first grooves and to cover top surfaces of the bit line structures and the gate structure. The sacrificial layer is planarized until the top surfaces of the bit line structures and the gate structure are exposed.

Methods of fabricating semiconductor devices

Growing community of inventors

Suwon-si, South Korea

Hee-sook Cheon