Samsung Electronics Co., Ltd.

K. C. Tech Co., Ltd.

Hee Sook Cheon

Il Young Yoon

Seung Ho Park

Jung Hun Kim

Sang Kyun Kim

Jin Woo Bae

Bo Un Yoon

Hyun Goo Kong

Jong Hyuk Park

Hao Cui

Woo In Lee

Su Young Shin

Yang Hee Lee

Sang Mi Lee

Young Ho Koh

A method of forming a semiconductor device includes forming a mold structure on a substrate, forming a first mask layer having a deposition thickness on the mold structure and patterning the first mask layer to form first mask openings which expose the mold structure. The mold structure is etched to form holes that penetrate the mold structure. The first mask layer is thinned to form mask portions having thickness smaller than the deposition thickness. Conductive patterns are formed to fill the holes and the first mask openings. The first mask layer including the mask portions is etched to expose the mold structure. The conductive patterns include protrusions. A chemical mechanical polishing process is performed to remove the protrusions of the conductive patterns.

Method of forming semiconductor device

A slurry composition for polishing a metal layer and a method for fabricating a semiconductor device using the same are provided. The slurry composition for polishing a metal layer includes polishing particles including a metal oxide, an oxidizer including hydrogen peroxide, and a first polishing regulator including at least one selected from a group consisting of phosphate, phosphite, hypophosphite, and metaphosphate, wherein a content of the oxidizer is 0.01 wt % to 0.09 wt % with respect to 100 wt % of the slurry composition for polishing the metal layer.

Slurry compositions for polishing a metal layer and methods for fabricating semiconductor devices using the same

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Seoul, South Korea

Hee Sook Cheon