Samsung Electronics Co., Ltd.

Kookje Electric Korea Co., Ltd.

Hee-Seok Kim

Jae-young Ahn

Jin-Gyun Kim

Ju-Wan Lim

Yong-Sung Park

Bong-jin Kuh

Sung-ho Kang

Yong-Kyu Joo

Sung-Ho Heo

Young-sun Kim

Young-Seok Kim

Min-Young Park

Ik-Soo Kim

Beom-jun Jin

Eun-ae Chung

U-in Chung

Hong-suk Kim

Ki-hyun Hwang

Jung-Hwan Oh

Suk-Ho Joo

Yong-Woo Hyung

Man-Sug Kang

Hyun-Suk Kwon

Sung-hae Lee

Sang-Ryol Yang

Kyung-rae Byun

Seok-woo Nam

Hyo-jung Kim

Sang-ryol Yang

Sung-Hae Lee

Subramanya Mayya

Won-sik Shin

Hyoung-seub Rhie

Jin-tae Noh

Hong-Suk Kim

Hwa-Young Ko

Jin-Hwan Ham

Jin-Tae No

In a method of forming an epitaxial layer, an etching gas may be decomposed to form decomposed etching gases. A source gas may be decomposed to form decomposed source gases. The decomposed source gases may be applied to a substrate to form the epitaxial layer on the substrate. A portion of the epitaxial layer on a specific region of the substrate may be etched using the decomposed etching gases. Before the etching gas is introduced into the reaction chamber, the etching gas may be previously decomposed. The decomposed etching gases may then be introduced into the reaction chamber to etch the epitaxial layer on the substrate. As a result, the epitaxial layer on the substrate may have a uniform distribution.

Method of forming an epitaxial layer on a substrate, and apparatus and system for performing the same

Provided is a data storage device. The data storage device includes an interface, a buffer controller, a memory controller, a non-volatile memory, and a self-powered semiconductor device adjacent to and electrically connected to the buffer controller. The self-powered semiconductor device includes a semiconductor chip and a rechargeable micro-battery attached to the semiconductor chip. The rechargeable micro-battery includes a first current collector and a second current collector, which face each other, a first polarizing electrode in contact with the first current collector and facing the second current collector, a second polarizing electrode in contact with the second current collector and facing the first polarizing electrode, and an electrolyte layer formed between the first and second polarizing electrodes.

Data storage device having self-powered semiconductor device

A semiconductor device includes a capacitor having a bottom electrode, a dielectric layer formed on the bottom electrode, a top electrode formed on the dielectric layer, and a contact plug having a metal that is connected with the top electrode, wherein the top electrode includes a doped poly-SiGelayer and a doped polysilicon layer epitaxially deposited on the doped poly-SiGelayer and the contact plug makes a contact with the doped polysilicon layer.

Semiconductor device including capacitor and method of fabricating same

Disclosed are a semiconductor device and a related method of manufacture. The semiconductor device comprises a semiconductor substrate, a conductive structure including contact regions and gate structures formed on the semiconductor substrate, a protection layer formed on the gate structures, an insulation layer formed on the protection layer, and a plurality of contacts directly contacting the contact regions and the semiconductor substrate through the insulation layer, wherein the contacts have substantially different heights from each other.

Semiconductor device and related method of manufacture

The present invention provides nitrogenous compositions for forming a silicon nitride layer, wherein the nitrogenous composition comprises a hydrazine compound, an amine compound or a mixture thereof. The present invention further provides source compositions for forming a silicon nitride layer, wherein the source composition comprises a nitrogenous composition comprising a hydrazine compound, an amine compound or a mixture thereof, and a silicon source comprising hexachlorodisilane. Methods for forming silicon nitride layers are further provided. The silicon nitride layers provided herein may be formed on a substrate at a low temperature and may further exhibit improved breakdown voltage and an enhanced etch resistance.

Methods of forming silicon nitride layers using nitrogenous compositions

A capacitor of a semiconductor device includes a cylinder type capacitor lower electrode, a dielectric layer, and an upper electrode. The upper electrode includes a metallic layer on the dielectric layer and a doped polySiGelayer stacked on the metallic layer. Methods of forming these capacitors also are provided.

Methods of forming capacitors of semiconductor devices including silicon-germanium and metallic electrodes

A method for forming a low-k dielectric layer for a semiconductor device using an ALD process including (a) forming predetermined interconnection patterns on a semiconductor substrate, (b) supplying a first and a second reactive material to a chamber having the substrate therein, thereby adsorbing the first and second reactive materials on a surface of the substrate, (c) supplying a first gas to the chamber to purge the first and second reactive materials that remain unreacted, (d) supplying a third reactive material to the chamber, thereby causing a reaction between the first and second materials and the third reactive material to form a monolayer, (e) supplying a second gas to the chamber to purge the third reactive material that remains unreacted in the chamber and a byproduct; and (f) repeating (b) through (e) a predetermined number of times to form a SiBN ternary layer having a predetermined thickness on the substrate.

Method for forming a low-k dielectric layer for a semiconductor device

Growing community of inventors

Seongnam-si, South Korea

Hee-Seok Kim