Samsung Electronics Co., Ltd.

Hee Seok Eun

Jae Hong Kim

Jun Jin Kong

Hong Rak Son

Kyoung Lae Cho

Seung-Hwan Song

Yong June Kim

Soo-Young Ji

Ji Soo Kim

Han Woong Yoo

Seong Hyeog Choi

Young Kwang Yoo

Young June Kim

Jong Ha Kim

Hyung Joon Park

A storage device includes a non-volatile memory including a plurality of namespaces including a plurality of logical blocks; and a storage controller configured to, for each of the plurality of namespaces, check a capacity that is a number of allocable logical blocks, among the plurality of logical blocks, and a size that is a sum of a number of currently allocated logical blocks, among the plurality of logical blocks, and the number of allocable logical blocks, detect a first namespace, among the plurality of namespaces, by using the capacity and the size, and provide at least a portion of the allocable logical blocks of a second namespace, among the plurality of namespaces, to the first namespace.

Storage device and method of operating the same

A storage device includes a storage controller, which is configured to receive a command generated by a first virtual machine, from a host, and a non-volatile memory device, which is configured to store first data for the command. The command includes one of a retain command, which is generated to command the storage controller to retain the first data in the non-volatile memory device, or an erase command, which is generated to command the storage controller to erase the first data from the non-volatile memory device, when access between the first virtual machine and the storage controller at least temporarily interrupted.

Storage device supporting multi-tenant operation and methods of operating same

A nonvolatile memory device comprises a memory controller having a memory cell status estimator that generates status estimation information indicating the status of a memory cell based on status register data, a coupling group index selector configured to generate a select signal for selecting a page and coupling group index from the status estimation information, and a memory cell status value generator configured to map the status estimation information to the data reliability decision bits and the coupling group index and generate a status value of the memory cell for error correction code decoding.

Memory controller for nonvolatile memory device, memory system comprising memory controller, and related methods of operation

A method of reading data in a non-volatile memory device. The method includes reading a plurality of memory cells of a first page in a memory cell array using a first read level, reading a plurality of memory cells of a second page adjacent to the memory cells of the first page using a second read level, determining whether a state of each memory cell of the first page has been changed based on the first read level to verify a threshold voltage of each memory cell of the second page based on the second read level, and revising the state of each memory cell of the second page according to a result of the determination.

Method of reading data in non-volatile memory device, and device thereof

A method of estimating a read level for a memory device includes calculating first information corresponding to at least one among information about the number of cells having a particular logic level in data to be programmed and information about the number of cells having a particular cell state and storing the first information during a program operation; reading the data based on a threshold level that has been set and calculating second information about the number of cells in at least one state defined by the threshold level with respect to the read data; calculating third information about the number of cells in the at least one state, which corresponds to the second information, using a probability based on the first information; comparing the second information with the third information; and determining whether to change the threshold level according to the comparison result.

Method of estimating read level for a memory device, memory controller therefor, and recording medium

A method of reading a nonvolatile memory device comprises measuring threshold voltage distributions of a plurality of memory cells, combining the measured threshold voltage distributions, and determining local minimum points in the combined threshold voltage distributions to determine read voltages for a predetermined group of memory cells.

Nonvolatile memory device and read method using dynamically determined read voltages

A nonvolatile memory device using interleaving technology is provided. The nonvolatile memory device includes a first controller configured to allocate one of 2threshold voltage states to N-bit data where N is 2 or a natural number greater than 2, a second controller configured to set a difference between adjacent threshold voltage states among the 2threshold voltage states so that the difference increases as a threshold voltage increases, and a programming unit configured to form a threshold voltage distribution state corresponding to the allocated threshold voltage state and to program the N-bit data to a multi-level cell. The second controller controls the difference between the adjacent threshold voltage states to equalize the number of read errors for all intersections among the 2threshold voltage states at the end of life.

Growing community of inventors

Hwaseong-si, South Korea

Hee Seok Eun