Electronics and Telecommunications Research Institute

Mvtech

Hee-ok Kim

Chi-Sun Hwang

Seung Youl Kang

Yong Hae Kim

Jaehyun Moon

Jong-Heon Yang

Seong-Mok Cho

Jae-Eun Pi

Ji Hun Choi

Jeho Na

Chan Woo Park

Sung Haeng Cho

Himchan Oh

Gi Heon Kim

Won Jae Lee

Chul Woong Joo

Ji-Young Oh

Joo Yeon Kim

Ha Kyun Lee

Provided are stretchable electronics and a method for manufacturing the same. The stretchable electronics may include a substrate, a plurality of electronic elements disposed to be spaced apart from each other on the substrate, and a wire structure disposed on the substrate to connect the plurality of electronic elements to each other. The wire structure may include an insulator extending from one of the electronic elements to the other of the adjacent electronic elements and a metal wire configured to cover a top surface and side surfaces of the insulator. The insulator may include at least one bent part in a plan view.

Stretchable electronics and method for manufacturing the same

An apparatus which analyses a depth of a holographic image is provided. The apparatus includes an acquisition unit that acquires a hologram, a restoration unit that restores a three-dimensional holographic image by irradiating the hologram with a light source, an image sensing unit that senses a depth information image of the restored holographic image, and an analysis display unit that analyzes a depth quality of the holographic image, based on the sensed depth information image, and the image sensing unit uses a lensless type of photosensor.

Apparatus for analyzing depth of holographic image and analyzing method thereof

Provided are a semiconductor device, a display panel, and a display device including the same. The semiconductor device includes a lower electrode on one side of a substrate, a spacer on another side of the substrate, a middle electrode on the spacer, a lower channel layer on portions of a sidewall of the spacer, the middle electrode, and the lower electrode, a lower gate insulating layer on the lower channel layer, a common gate electrode on the gate insulating layer, an upper gate insulating layer on the common gate electrode, an upper electrode on the spacer and the upper gate insulating layer of the middle electrode, an upper channel layer connected to the upper electrode and disposed on a sidewall of the upper gate insulating layer, and a contact electrode connected to a portion of the upper channel layer and passing through the lower gate insulating layer and the upper gate insulating layer outside the common gate electrode so as to be connected to the lower electrode.

Semiconductor device, display panel, and display device including the same

Growing community of inventors

Daejeon, South Korea

Hee-ok Kim