Lg Innotek Co., Ltd.

Hyundai Electronics Industries Co. Ltd.

Hee Kyung Yoon

Yoon Jae Lee

Yeong S Choi

A solar cell includes a substrate, a back electrode layer on the substrate, a light absorbing layer on the back electrode layer, a buffer layer on the light absorbing layer, and a front electrode layer on the buffer layer. The buffer layer includes at least one of zinc sulfide (ZnS), zinc oxide (ZnO) and zinc hydroxide (Zn(OH)). A method of fabricating the solar cell includes forming a back electrode layer on a substrate, forming a light absorbing layer on the back electrode layer, forming a first buffer layer on the light absorbing layer, and forming a second buffer layer on the first buffer layer. The first buffer layer or the second buffer layer includes at least one of zinc sulfide (ZnS), zinc oxide (ZnO), and zinc hydroxide (Zn(OH)).

Solar cell and method of fabricating the same

A solar cell apparatus according to the embodiment includes a support substrate; a back electrode layer on the support layer; a light absorbing layer on the back electrode layer; a first buffer layer having first conductivity on the light absorbing layer; a second buffer layer having second conductivity on the first buffer layer; and a window layer on the second buffer layer.

Solar cell apparatus and method of fabricating the same

A high resistance load resistor in a static memory device and the method of fabricating such device is disclosed. The device is fabricated by depositing a first insulating oxide layer on a semiconductor substrate and depositing a first polysilicon layer on the first insulating oxide layer. The first polysilicon layer is etched to form a first polysilicon pad and a second polysilicon pad with the first polysilicon pad spaced apart from the second polysilicon pad. A second oxide layer is deposited on the first polysilicon layer and the first oxide layer. The second oxide layer is etched thereby shaping the second oxide island layer to be contiguously positioned on each of the first and second polysilicon pads and on the first oxide layer extending between the first and second polysilicon layers. The shaped second oxide island layer includes a sidewall in contact with the first oxide layer and extending from and in contact with each of the first and second polysilicon pads. A second polysilicon spacer is then formed along and in contact with the sidewall of the shaped second oxide island layer thereby electrically connecting the first and the second polysilicon pads thereby forming a high resistance load resistor in a static memory device.

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Seoul, South Korea

Hee Kyung Yoon