Samsung Electronics Co., Ltd.

Hee-Kook Choi

In-Ku Kang

Jin-Ho Kim

Sang-Wook Park

Joong-Hyun Baek

Dong-Hyeon Jang

Seung-Kwan Ryu

Sang-Yeop Lee

Sang-Ho An

Sung-min Sim

Hae-Hyung Lee

Jin-Yang Lee

A semiconductor chip structure may include a semiconductor chip, a first insulation layer and a redistribution layer. The first insulation layer may be formed on the semiconductor chip. The first insulation layer may have at least one first groove formed at an upper surface portion of the first insulation layer. Further, the at least one first groove may have an upper width and a lower width greater than the upper width. The redistribution layer may be partially formed on the first insulation layer. The redistribution layer may have at least one first protrusion formed on a lower surface portion of the redistribution layer. The first protrusion may have an upper width and a lower width less than the upper width. The first protrusion may be inserted into the at least one first groove.

Semiconductor chip structure, method of manufacturing the semiconductor chip structure, semiconductor chip package, and method of manufacturing the semiconductor chip package

In a memory module, a gap filler for eliminating an air gap may be formed on an end of a PCB where a tab may be formed. The gap filler may be formed on a surface of a socket receiving the memory module. A grease may be coated on the tab to provide a heat conduction path away from the memory module.

Memory module, socket and mounting method providing improved heat dissipating characteristics

In one embodiment, a pad is formed on a substrate surface. The pad is connected with a connecting pattern. A first mask is formed on the substrate. The first mask has a first opening exposing at least a portion of the pad and a portion of the connecting pattern. A second mask is formed on the first mask. The second mask has a second opening exposing at least a portion of the pad and a portion of the connecting pattern. A boundary surface or sidewall of the first opening is not coplanar with a boundary surface or sidewall of the second opening. Therefore, stresses may be prevented from concentrating on the boundary surface of the first opening, thereby allowing dispersion of the stresses and restraining pattern cracks.

Non-solder mask defined (NSMD) type wiring substrate for ball grid array (BGA) package and method for manufacturing such a wiring substrate

Provided herein are multi-chip modules (MCMs) having bonding wires and fabrication methods thereof. The multi-chip module includes a substrate and a plurality of chips sequentially stacked. At least one top chip, stacked above a lowest chip, has an insulating film that covers the backside thereof. Also, each of the stacked chips has bonding pads formed on the periphery or edges of its upper surface. At least one insulator is interposed between the stacked chips. The insulator exposes the pads on the underlying chip. The pads of the respective chips are connected to a set of interconnections, which are disposed on the substrate. This configuration of stacked chips enables the overall height of the memory module to be reduced because the insulating film prevents the bonding wires from contacting the substrate of the top chips.

Multi-chip module having bonding wires and method of fabricating the same

Growing community of inventors

Seoul, South Korea

Hee-Kook Choi