Lg Chem, Ltd

Hee Jung Kim

Kwang Joo Lee

Jung Hak Kim

Se Ra Kim

Young Kook Kim

Seung Hee Nam

Jung Ho Jo

Ji Ho Han

Dae Woo Nam

Dong Ryul Kim

Hyo Sun Lee

Sang Uk Ryu

Boong Goon Jeong

Ju Eun Cha

Ho Jun Lee

Nu Ri Na

The present invention relates to an adhesive film having a thixotropic index at 110&#xb0; C. of 1.5 to 7.5, which is used for fixing a first semiconductor device and a second semiconductor device, a ratio of an area of said first semiconductor device to an area of said second semiconductor device being 0.65 or less, a method for preparing a semiconductor device using the adhesive film, and a semiconductor device.

Adhesive film, preparation method of semiconductor device, and semiconductor device

The present invention relates to a semiconductor device and a method of manufacturing a semiconductor device, and more particularly, to a semiconductor device capable of reducing the uppermost semiconductor chip damage and stably performing wire bonding even if an excessive force is applied during a die bonding process or a wire bonding process, and a method for manufacturing the semiconductor device.

Semiconductor device and method for manufacturing semiconductor device

The present invention relates to a semiconductor device including: a first semiconductor element formed on an adherend; and an adhesive film for embedding the first semiconductor element, wherein the adhesive film satisfies a predetermined ratio between a melt viscosity and a weight loss ratio at a high temperature.

Semiconductor device

The present invention relates to an adhesive film for a semiconductor that can more easily bury unevenness such as through wires of a semiconductor substrate or a wire attached to a semiconductor chip and the like, and yet can be applied to various cutting methods without specific limitations to realize excellent cuttability, thus improving reliability and efficiency of a semiconductor packaging process.

Adhesive film for semiconductor

There are provided an adhesive film for a semiconductor including: a conductive layer containing at least one metal selected from the group consisting of copper, nickel, cobalt, iron, stainless steel (SUS), and aluminum, and having a thickness of 0.05 &#x3bc;m or more; and an adhesive layer formed on at least one surface of the conductive layer and including a (meth)acrylate-based resin, a curing agent, and an epoxy resin, and a semiconductor device including the above-mentioned adhesive film.

Adhesive film for semiconductor, and semiconductor device

The present invention relates to an adhesive composition for a semiconductor including: a thermoplastic resin having a glass transition temperature of &#x2212;10&#xb0; C. to 20&#xb0; C.; a curing agent containing a phenol resin having a softening point of 70&#xb0; C. or more; a solid epoxy resin; and a liquid epoxy resin, wherein a weight ratio of the total contents of the solid epoxy resin and the liquid epoxy resin to the thermoplastic resin is 1.6 to 2.6, an adhesive film for a semiconductor including the adhesive composition for a semiconductor, a dicing die bonding film including an adhesive layer including the adhesive composition for a semiconductor, and a method for dicing a semiconductor wafer using the dicing die bonding film.

Adhesive composition for semiconductor, adhesive film for semiconductor, and dicing die bonding film

There are provided a composition for forming an adhesive layer of a dicing film, including: a polymer additive including at least one polymer selected from the group consisting of a polymer containing a (meth)acrylate-based functional group and a non-polar functional group, a (meth)acrylate-based polymer containing at least one fluorine, and a silicon-modified (meth)acrylate-based polymer containing a reactive functional group; an adhesive binder; and a photoinitiator, wherein a weight ratio of the polymer additive to the adhesive binder is 0.01% to 4.5%, a dicing film including an adhesive layer including the composition, a dicing die bonding film including the dicing film, and a method for dicing a semiconductor wafer using the dicing die bonding film.

Composition for forming adhesive layer of dicing film, and dicing film

The present invention relates to an adhesive resin composition for a semiconductor, including: a (meth)acrylate-based resin including a (meth)acrylate-based repeating unit containing an epoxy-based functional group and a (meth)acrylate-based repeating unit containing an aromatic functional group, the (meth)acrylate-based resin having a hydroxyl equivalent weight of 0.15 eq/kg or less; a curing agent including a phenol resin having a softening point of 100&#xb0; C. or higher; and an epoxy resin, wherein the content of a (meth)acrylate-based functional group containing an aromatic functional group in the (meth)acrylate-based resin is 2 to 40% by weight, an adhesive film for a semiconductor including the above adhesive resin composition for a semiconductor, a dicing die bonding film including an adhesive layer including the adhesive film for a semiconductor, and a method for dicing a semiconductor wafer using the dicing die bonding film.

Adhesive resin composition for semiconductor, adhesive film for semiconductor, and dicing die bonding film

The present invention relates to a method for measuring metal ion permeability of a polymer film, comprising the steps of: applying a voltage to the polymer film at a temperature of 5&#xb0; C. to 250&#xb0; C., while one side of the polymer film is brought into contact with an electrolyte comprising metal ions, an organic solvent and an aqueous solvent; and measuring the change rate of resistance or change rate of current of the polymer film according to time, after the voltage is applied, and a device for measuring metal ion permeability of a polymer film used therefor.

Method for measuring metal ion permeability of polymer film and device for measuring metal ion permeability of polymer film

The present invention relates to a method for measuring metal ion permeability of a polymer film, comprising the steps of applying a voltage to the polymer film, while at least one side of the polymer film is brought into contact with an electrolyte comprising metal ions, an organic solvent and an aqueous solvent; and measuring the change rate of resistance or change rate of current of the polymer film according to time, after the voltage is applied, and a device for measuring metal ion permeability of a polymer film used therefor.

The present invention relates to a semiconductor device including: a first semiconductor element fixed onto an adherend by flip-chip connection; an adhesive layer for embedding a space between the adherend and the first semiconductor element and embedding the first semiconductor element; and a second semiconductor element connected to the first semiconductor element via the adhesive layer, wherein the adhesive layer has a predetermined melt viscosity and thixotropic index.

Semiconductor device and method for manufacturing the same using an adhesive

The present invention relates to an adhesive resin composition for bonding semiconductors, including: a (meth)acrylate-based resin including more than 17% by weight of (meth)acrylate-based repeating units containing epoxy-based functional groups; an epoxy resin having a softening point of more than 70&#xb0; C.; and a phenol resin having a softening point of more than 105&#xb0; C., wherein the weight ratio of the (meth)acrylate-based resin is 0.48 to 0.65 relative to the total weight of the (meth)acrylate-based resin, the epoxy resin, and the phenol resin, an adhesive film for semiconductors obtained from the resin composition, a dicing die-bonding film including an adhesive layer that includes the adhesive film for semiconductors, a semiconductor wafer including the dicing die-bonding film, and a dicing method for the semiconductor wafer using the dicing die-bonding film.

Adhesive resin compostition for bonding semiconductors and adhesive film for semiconductors

The present invention relates to a dicing film including: a substrate film; and a cohesive layer, wherein a storage modulus of the cohesive layer at 30&#xb0; C. is 3*10to 4*10Pa, and the cohesive layer has a degree of cross-linking of 80% to 99%, a dicing die-bonding film including the dicing film, and a dicing method of a semiconductor wafer using the dicing die-bonding film.

Dicing film and dicing die-bonding film

There are provided a composition for forming an adhesive layer of a dicing film including: a silicon compound oil including at least one reactive functional group; an adhesive binder; and a photoinitiator, wherein a weight ratio of the silicon compound oil including at least one reactive functional group to the adhesive binder is 0.01% to 4.5%, a dicing film including an adhesive layer including the composition, a dicing die bonding film including the dicing film, and a method for dicing a semiconductor wafer using the dicing die bonding film.

Growing community of inventors

Daejeon, South Korea

Hee Jung Kim