Leland Stanford Junior University

Honda Patents & Technologies North America, LLC

Honda Motor Co., Ltd.

Hee Joon Jung

Friedrich B Prinz

Andrei Teodor Iancu

Neil Dasgupta

Hitoshi Iwadate

Timothy P Holme

Takane Usui

Michael C Langston

Munekazu Motoyama

Cheng-Chieh Chao

Rainer Johannes Fasching

Shicheng Xu

A method of fabricating single-crystalline metal silicide nanowires for anti-reflective electrodes for photovoltaics is provided that includes exposing a surface of a metal foil to oxygen or hydrogen at an elevated temperature, and growing metal silicide nanowires on the metal foil surface by flowing a silane gas mixture over the metal foil surface at the elevated temperature, where spontaneous growth of the metal silicide nanowires occur on the metal foil surface, where the metal silicide nanowires are post treated for use as an electrode in a photovoltaic cell or used directly as the electrode in the photovoltaic cell.

Metal silicide nanowire arrays for anti-reflective electrodes in photovoltaics

A method of fabricating quantum confinements is provided. The method includes depositing, using a deposition apparatus, a material layer on a substrate, where the depositing includes irradiating the layer, before a cycle, during a cycle, and/or after a cycle of the deposition to alter nucleation of quantum confinements in the material layer to control a size and/or a shape of the quantum confinements. The quantum confinements can include quantum wells, nanowires, or quantum dots. The irradiation can be in-situ or ex-situ with respect to the deposition apparatus. The irradiation can include irradiation by photons, electrons, or ions. The deposition is can include atomic layer deposition, chemical vapor deposition, MOCVD, molecular beam epitaxy, evaporation, sputtering, or pulsed-laser deposition.

Irradiation assisted nucleation of quantum confinements by atomic layer deposition

Growing community of inventors

Palo Alto, CA, United States of America

Hee Joon Jung