Cheil Industries Inc.

Sejong University

Hyundai Motor Company

Kia Corporation

Hee Jae Kim

Sung Jae Lee

Seung Taek Myung

Sang Geun Yun

Tae Ho Kim

Sang Shin Lee

Yoon Sung Lee

Seung Min Oh

Sung Ho Ban

Sang Mok Park

Ji Eun Lee

Jun Ki Rhee

Chang Soo Woo

Ko Eun Kim

Min Young Shin

Chang Se Woo

Woo Young Jin

Jae Hyeon Jo

Disclosed is a positive electrode material for a lithium secondary battery. The positive electrode material includes a positive electrode active material formed of Li—[Mn—Ti]-M-O-based material including a transition metal (M) to enable reversible intercalation and deintercalation of lithium and molybdenum oxide. The positive electrode active material is coated with the molybdenum oxide to form a coating layer on a surface thereof.

Positive electrode material for lithium secondary battery and lithium secondary battery including same

Disclosed is a zinc ion secondary battery. More particularly, the zinc ion secondary battery includes a first electrode; a second electrode; and an electrolyte disposed between the first electrode and the second electrode, wherein an active material included in the first electrode is an alkali metal-vanadium oxide/graphene oxide composite, wherein the alkali metal-vanadium oxide has a layered structure in which alkali metal layers and vanadium oxide layers are alternately stacked. Accordingly, a zinc ion battery system including the KVO/a graphene oxide composite as an electrode active material can exhibit excellent rechargeability and have a high discharge capacity and an excellent capacity retention rate.

Electrode material for zinc secondary batteries

A composition with improved shelf life for filling small gaps in a semiconductor device is provided. The composition comprises an end-capped silicone polymer. The molecular weight of the end-capped silicone polymer is not varied during storage. In addition, the dissolution rate (DR) of the composition in an alkaline developing solution is maintained at a desired level during storage. That is, the composition is highly stable during storage. Therefore, the composition is suitable for use in a node separation process for the fabrication of a semiconductor capacitor.

Gap-filling composition with excellent shelf life by end-capping

A compound for filling small gaps in a semiconductor device, a composition for filling small gaps in a semiconductor device, and a method of fabricating a semiconductor capacitor, the compound including hydrolysates prepared by hydrolysis, in the presence of an acid catalyst, of compounds represented by Formulae 1, 2, and 3:[RO]Si&#x2014;[CH]R'&#x2003;&#x2003;(1)wherein, in Formula 1, n is an integer from 0 to about 10, and R and R&#x2032; are each independently a hydrogen atom, a C1-C12 alkyl group, or a C6-C20 aryl group;HOOC[CH]RSi&#x2014;O&#x2014;SiR&#x2032;[CH]COOH&#x2003;&#x2003;(2)wherein, in Formula 2, each n is independently an integer from 0 to about 10, and R and R&#x2032; are each independently a C1-C12 alkyl group or a C6-C20 aryl group; andRSi&#x2014;O&#x2014;X&#x2003;&#x2003;(3)wherein, in Formula 3, X is R&#x2032; or SiR&#x2032;, and R and R&#x2032; are each independently a C1-C12 alkyl group or a C6-C20 aryl group, or a polycondensate prepared by polycondensation of the hydrolysates represented by Formulae 1, 2, and 3.

Compound for filling small gaps in a semiconductor device, composition including the compound, and method of fabricating a semiconductor capacitor

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Seoul, South Korea

Hee Jae Kim