Samsung Electronics Co., Ltd.

Sungkyunkwan University

Hee-Bom Kim

Sang-hee Lee

Byung-Gook Kim

Hwan-Chul Jeon

Tae-Sung Kim

Jin Hyeock Choi

Soo-Young Kim

Seul-Gi Kim

Ji-Beom Yoo

Dong-Wook Shin

Mun-Ja Kim

Jin Hwan Choi

Mun Ja Kim

Chan-Uk Jeon

Myoung-Soo Lee

Myoung-soo Lee

Young-Su Sung

Sun-Young Choi

Sung-won Kwon

Hak-Seung Han

Young-keun Yoon

Min-Kyu Ji

Hyun-Joo Baik

Chang-young Jeong

A method of manufacturing a pellicle includes preparing a pellicle frame having an adhesive layer coated thereon, treating a pellicle membrane with vapor under vapor atmosphere, attaching the pellicle membrane onto the pellicle frame, and drying the pellicle membrane.

Apparatus for manufacturing pellicle

Method of manufacturing pellicle and apparatus for assembling pellicle

Provided is a pellicle for exposure to extreme ultraviolet light (EUVL) according to an example embodiment, and the pellicle includes a pellicle membrane; and a frame attached to the pellicle membrane, wherein the pellicle membrane includes a carbon-based main layer that has a first surface and a second surface, which are two surfaces opposite to each other; and a boron-based enhancement layer covering at least one surface selected from the first surface and the second surface. The pellicle according to an example embodiment may be used for an extended period of time in an extreme ultraviolet light exposure environment.

Pellicle for exposure to extreme ultraviolet light, photomask assembly, and method of manufacturing the pellicle

A method for manufacturing a photomask includes forming a photoresist film on a substrate, and forming a defect detecting pattern on the photoresist film. The defect detecting pattern has a first pattern elongated in a first direction and a second pattern overlapping one end of the first pattern and elongated in a second direction different from the first direction. The first pattern and the second pattern are formed using electron beams (e-beam) diffracted by a same amplifier.

Method for manufacturing photomask and photomask manufactured using the same

A method of forming a photomask using a calibration pattern that may exactly transfer a desired pattern to a substrate. The method includes providing one-dimensional calibration design patterns each having first design measures and providing two-dimensional calibration design patterns each having second design measures; obtaining one-dimensional calibration measured patterns using the one-dimensional calibration design patterns and obtaining two-dimensional calibration measured patterns using the two-dimensional calibration design patterns; obtaining first measured measures of the one-dimensional calibration measured patterns and obtaining second measured measures of the two-dimensional calibration measured patterns; establishing a correlation between the first measured measures and the second measured measures; and converting a main measured measure of a main pattern into a corresponding one of the first measured measures using the correlation.

Method of forming photomask using calibration pattern, and photomask having calibration pattern

A method of forming a semiconductor device can include determining a shot set including a plurality of shots, based on a final pattern used to form a mask. Shots included in the plurality shots can be classified as being in a first pass shot set or in a second pass shot set, where each can include a plurality of non-directly neighboring shots. A first pass exposure can be performed to radiate a reticle to provide the first pass shot set and a second pass exposure can be performed to radiate the reticle to provide the second pass shot set.

Methods of forming semiconductor devices using photolithographic shot grouping

A pattern forming method includes providing a first mask with a first aperture, forming a first transfer pattern on a resist by irradiating a first electron beam through the first aperture, the first transfer pattern extending in a first direction and having a boundary along a circumference thereof, and the first electron beam having a cross section of a first square when emerging from the first aperture, and forming a second transfer pattern on the resist by irradiating a second electron beam through the first aperture, the second transfer pattern extending in the first direction and overlapping a portion the boundary of the first transfer pattern, and the second electron beam having a cross section of a second square when emerging from the first aperture.

Pattern forming method

A method for inspecting a uniformity of CD (CD) of a photo mask pattern increases a production yield. The method obtains a CD by precisely measuring a photo mask by using, an electron microscope. Then, a measurement image having, a plurality of patterns formed in the photo mask is obtained by photographing the photo mask at a high speed through an optical microscope. A gray level based on the CD is calculated by capturing just a pattern area in the measurement image, and an estimated value and a correlation coefficient is obtained, when an open density of the measurement image is relatively low. Accordingly, a uniformity of CD can be confirmed more clearly in a measurement of high speed for a measurement image having a relatively low open density.

Method for inspecting critical dimension uniformity at high speed measurement

A method of precisely inspecting the entire surface of a mask at a high speed in consideration of optical effects of the mask. The method includes designing a target mask layout for a pattern to be formed on a wafer, and extracting an effective mask layout using an inspection image measured from the target mask layout using an aerial image inspection apparatus as a mask inspection apparatus. The effective mask layout is input to a wafer simulation tool for calculating a wafer image to be formed on the wafer. Optical effects of the mask are detected by comparing the target mask layout with the effective mask layout.

Method of inspecting mask using aerial image inspection apparatus

Growing community of inventors

Hwaseong-si, South Korea

Hee-Bom Kim